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Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.

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Title: Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.
Authors: Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR)
Source: Microelectronic Engineering. Feb2022, Vol. 254, pN.PAG-N.PAG. 1p.
Subjects: Heterojunctions, Zinc oxide synthesis, Zinc oxide, Indium tin oxide
Abstract: In this research, we report asymmetric resistive switching (RS) characteristics using p-NiO and n-ZnO heterojunctions. A cost-effective spray pyrolysis technique is adopted for the deposition of n-ZnO and p-NiO layers. The structural analysis of ZnO and NiO layers confirms the hexagonal wurtzite and cubic structure, respectively. The morphological analysis of the p-NiO/n-ZnO heterojunction confirms the presence of a multilayered structure. The heterojunction was stacked between top silver (Ag) and bottom indium doped tin oxide (ITO) electrodes, and the RS characteristics were investigated. The RS device exhibits asymmetric current-voltage (I-V) characteristics with an ON/OFF ratio calculated as 2.7 and stable endurance characteristics of 50 cycles. It was analyzed that the formation and rupture of conductive filaments through intrinsic defects modulated by the p-NiO and n-ZnO layers contribute to the observed asymmetric resistive switching (RS) behavior in the fabricated p-NiO/n-ZnO heterojunction. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this research, we report asymmetric resistive switching (RS) characteristics using p-NiO and n-ZnO heterojunctions. A cost-effective spray pyrolysis technique is adopted for the deposition of n-ZnO and p-NiO layers. The structural analysis of ZnO and NiO layers confirms the hexagonal wurtzite and cubic structure, respectively. The morphological analysis of the p-NiO/n-ZnO heterojunction confirms the presence of a multilayered structure. The heterojunction was stacked between top silver (Ag) and bottom indium doped tin oxide (ITO) electrodes, and the RS characteristics were investigated. The RS device exhibits asymmetric current-voltage (I-V) characteristics with an ON/OFF ratio calculated as 2.7 and stable endurance characteristics of 50 cycles. It was analyzed that the formation and rupture of conductive filaments through intrinsic defects modulated by the p-NiO and n-ZnO layers contribute to the observed asymmetric resistive switching (RS) behavior in the fabricated p-NiO/n-ZnO heterojunction. [ABSTRACT FROM AUTHOR]
ISSN:01679317
DOI:10.1016/j.mee.2021.111669