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Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.

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Title: Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.
Authors: Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR)
Source: Microelectronic Engineering. Feb2022, Vol. 254, pN.PAG-N.PAG. 1p.
Subjects: Heterojunctions, Zinc oxide synthesis, Zinc oxide, Indium tin oxide
Abstract: In this research, we report asymmetric resistive switching (RS) characteristics using p-NiO and n-ZnO heterojunctions. A cost-effective spray pyrolysis technique is adopted for the deposition of n-ZnO and p-NiO layers. The structural analysis of ZnO and NiO layers confirms the hexagonal wurtzite and cubic structure, respectively. The morphological analysis of the p-NiO/n-ZnO heterojunction confirms the presence of a multilayered structure. The heterojunction was stacked between top silver (Ag) and bottom indium doped tin oxide (ITO) electrodes, and the RS characteristics were investigated. The RS device exhibits asymmetric current-voltage (I-V) characteristics with an ON/OFF ratio calculated as 2.7 and stable endurance characteristics of 50 cycles. It was analyzed that the formation and rupture of conductive filaments through intrinsic defects modulated by the p-NiO and n-ZnO layers contribute to the observed asymmetric resistive switching (RS) behavior in the fabricated p-NiO/n-ZnO heterojunction. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 154692287
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PubTypeId: academicJournal
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  Data: Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.
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  Data: <searchLink fieldCode="AR" term="%22Kossar%2C+Shahnaz%22">Kossar, Shahnaz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> amir@crescent.education</i><br /><searchLink fieldCode="AR" term="%22Rasool%2C+Asif%22">Rasool, Asif</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Feb2022, Vol. 254, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+synthesis%22">Zinc oxide synthesis</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+tin+oxide%22">Indium tin oxide</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this research, we report asymmetric resistive switching (RS) characteristics using p-NiO and n-ZnO heterojunctions. A cost-effective spray pyrolysis technique is adopted for the deposition of n-ZnO and p-NiO layers. The structural analysis of ZnO and NiO layers confirms the hexagonal wurtzite and cubic structure, respectively. The morphological analysis of the p-NiO/n-ZnO heterojunction confirms the presence of a multilayered structure. The heterojunction was stacked between top silver (Ag) and bottom indium doped tin oxide (ITO) electrodes, and the RS characteristics were investigated. The RS device exhibits asymmetric current-voltage (I-V) characteristics with an ON/OFF ratio calculated as 2.7 and stable endurance characteristics of 50 cycles. It was analyzed that the formation and rupture of conductive filaments through intrinsic defects modulated by the p-NiO and n-ZnO layers contribute to the observed asymmetric resistive switching (RS) behavior in the fabricated p-NiO/n-ZnO heterojunction. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mee.2021.111669
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Zinc oxide synthesis
        Type: general
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Indium tin oxide
        Type: general
    Titles:
      – TitleFull: Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions.
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            NameFull: Kossar, Shahnaz
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            NameFull: Amiruddin, R.
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            NameFull: Rasool, Asif
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            – D: 01
              M: 02
              Text: Feb2022
              Type: published
              Y: 2022
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              Value: 01679317
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              Value: 254
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            – TitleFull: Microelectronic Engineering
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