Bibliographic Details
| Title: |
Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications. |
| Authors: |
Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR), Kumar, M.C. Santhosh2 (AUTHOR), Katragadda, Nagamalleswari3 (AUTHOR), Mandal, Pranab3 (AUTHOR), Ahmed, Nafis4 (AUTHOR) |
| Source: |
Current Applied Physics. Jul2022, Vol. 39, p221-229. 9p. |
| Database: |
Engineering Source |
