Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications.
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| Title: | Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications. |
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| Authors: | Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR), Kumar, M.C. Santhosh2 (AUTHOR), Katragadda, Nagamalleswari3 (AUTHOR), Mandal, Pranab3 (AUTHOR), Ahmed, Nafis4 (AUTHOR) |
| Source: | Current Applied Physics. Jul2022, Vol. 39, p221-229. 9p. |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 157393375 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=157393375 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.cap.2022.04.013 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 221 Titles: – TitleFull: Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kossar, Shahnaz – PersonEntity: Name: NameFull: Amiruddin, R. – PersonEntity: Name: NameFull: Rasool, Asif – PersonEntity: Name: NameFull: Kumar, M.C. Santhosh – PersonEntity: Name: NameFull: Katragadda, Nagamalleswari – PersonEntity: Name: NameFull: Mandal, Pranab – PersonEntity: Name: NameFull: Ahmed, Nafis IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 15671739 Numbering: – Type: volume Value: 39 Titles: – TitleFull: Current Applied Physics Type: main |
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