Micron-thick ternary relaxor 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 thin films with superior pyroelectric response on Si substrate.
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| Title: | Micron-thick ternary relaxor 0.36Pb(In |
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| Authors: | Yang, Jiaqian1 (AUTHOR), Wu, Zheng1 (AUTHOR), Duan, Zhihua1 (AUTHOR), Li, Chuanqin1 (AUTHOR), Zhou, Helezi2 (AUTHOR), Wang, Tao1 (AUTHOR) twang@shnu.edu.cn, Wang, Feifei1 (AUTHOR) f_f_w@sohu.com, Zhao, Xiangyong1 (AUTHOR), Tang, Yanxue1 (AUTHOR), Pan, Han3 (AUTHOR), Leung, Chung Ming4 (AUTHOR) cmleung@hit.edu.cn |
| Source: | Applied Physics A: Materials Science & Processing. Jun2022, Vol. 128 Issue 6, p1-8. 8p. |
| Subjects: | Thin films, Infrared array detectors, Piezoresponse force microscopy, Pyroelectric detectors, Piezoelectric detectors, Lead titanate |
| Abstract: | One of the critical challenges in developing high-performance micromachined pyroelectric infrared detector array and piezoelectric micro/nanosensors lies in obtaining excellent sensing thin films with micron thickness. In this study, high-quality ternary 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 (PIMNT36/36/28) thin films with high-Curie point were prepared on Pt/Ti/SiO2/Si substrates and dense morphology and remarkable dielectric, ferroelectric, piezoelectric, and pyroelectric properties were obtained. Under optimized processing temperature of 650 °C, the remnant polarization of the films reached 19.15 μC/cm2 and large pyroelectric coefficient up to 6.85 × 10–4 C/m2 K was obtained with high figure of merit (Detectivity F d reached 1.96 × 10–5 Pa−1/2 @ 100 Hz for 1 μm-thick PIMNT36/36/28 film). Piezoresponse force microscopy revealed an obvious domain reversal under in situ electric field with "butterfly" shape local piezoelectric response. The superior global performance makes the present PIMNT36/36/28 thin film quite favorable for integrated pyroelectric devices' applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | One of the critical challenges in developing high-performance micromachined pyroelectric infrared detector array and piezoelectric micro/nanosensors lies in obtaining excellent sensing thin films with micron thickness. In this study, high-quality ternary 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 (PIMNT36/36/28) thin films with high-Curie point were prepared on Pt/Ti/SiO2/Si substrates and dense morphology and remarkable dielectric, ferroelectric, piezoelectric, and pyroelectric properties were obtained. Under optimized processing temperature of 650 °C, the remnant polarization of the films reached 19.15 μC/cm2 and large pyroelectric coefficient up to 6.85 × 10–4 C/m2 K was obtained with high figure of merit (Detectivity F d reached 1.96 × 10–5 Pa−1/2 @ 100 Hz for 1 μm-thick PIMNT36/36/28 film). Piezoresponse force microscopy revealed an obvious domain reversal under in situ electric field with "butterfly" shape local piezoelectric response. The superior global performance makes the present PIMNT36/36/28 thin film quite favorable for integrated pyroelectric devices' applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09478396 |
| DOI: | 10.1007/s00339-022-05668-w |
