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Micron-thick ternary relaxor 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 thin films with superior pyroelectric response on Si substrate.

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Title: Micron-thick ternary relaxor 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 thin films with superior pyroelectric response on Si substrate.
Authors: Yang, Jiaqian1 (AUTHOR), Wu, Zheng1 (AUTHOR), Duan, Zhihua1 (AUTHOR), Li, Chuanqin1 (AUTHOR), Zhou, Helezi2 (AUTHOR), Wang, Tao1 (AUTHOR) twang@shnu.edu.cn, Wang, Feifei1 (AUTHOR) f_f_w@sohu.com, Zhao, Xiangyong1 (AUTHOR), Tang, Yanxue1 (AUTHOR), Pan, Han3 (AUTHOR), Leung, Chung Ming4 (AUTHOR) cmleung@hit.edu.cn
Source: Applied Physics A: Materials Science & Processing. Jun2022, Vol. 128 Issue 6, p1-8. 8p.
Subjects: Thin films, Infrared array detectors, Piezoresponse force microscopy, Pyroelectric detectors, Piezoelectric detectors, Lead titanate
Abstract: One of the critical challenges in developing high-performance micromachined pyroelectric infrared detector array and piezoelectric micro/nanosensors lies in obtaining excellent sensing thin films with micron thickness. In this study, high-quality ternary 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 (PIMNT36/36/28) thin films with high-Curie point were prepared on Pt/Ti/SiO2/Si substrates and dense morphology and remarkable dielectric, ferroelectric, piezoelectric, and pyroelectric properties were obtained. Under optimized processing temperature of 650 °C, the remnant polarization of the films reached 19.15 μC/cm2 and large pyroelectric coefficient up to 6.85 × 10–4 C/m2 K was obtained with high figure of merit (Detectivity F d reached 1.96 × 10–5 Pa−1/2 @ 100 Hz for 1 μm-thick PIMNT36/36/28 film). Piezoresponse force microscopy revealed an obvious domain reversal under in situ electric field with "butterfly" shape local piezoelectric response. The superior global performance makes the present PIMNT36/36/28 thin film quite favorable for integrated pyroelectric devices' applications. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Micron-thick ternary relaxor 0.36Pb(In<subscript>1/2</subscript>Nb<subscript>1/2</subscript>)O<subscript>3</subscript>–0.36Pb(Mg<subscript>1/3</subscript>Nb<subscript>2/3</subscript>)O<subscript>3</subscript>–0.28PbTiO<subscript>3</subscript> thin films with superior pyroelectric response on Si substrate.
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  Data: <searchLink fieldCode="AR" term="%22Yang%2C+Jiaqian%22">Yang, Jiaqian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Zheng%22">Wu, Zheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Duan%2C+Zhihua%22">Duan, Zhihua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Chuanqin%22">Li, Chuanqin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Helezi%22">Zhou, Helezi</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Tao%22">Wang, Tao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> twang@shnu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Feifei%22">Wang, Feifei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> f_f_w@sohu.com</i><br /><searchLink fieldCode="AR" term="%22Zhao%2C+Xiangyong%22">Zhao, Xiangyong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tang%2C+Yanxue%22">Tang, Yanxue</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pan%2C+Han%22">Pan, Han</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Leung%2C+Chung+Ming%22">Leung, Chung Ming</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> cmleung@hit.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Jun2022, Vol. 128 Issue 6, p1-8. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+array+detectors%22">Infrared array detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Piezoresponse+force+microscopy%22">Piezoresponse force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Pyroelectric+detectors%22">Pyroelectric detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Piezoelectric+detectors%22">Piezoelectric detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Lead+titanate%22">Lead titanate</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: One of the critical challenges in developing high-performance micromachined pyroelectric infrared detector array and piezoelectric micro/nanosensors lies in obtaining excellent sensing thin films with micron thickness. In this study, high-quality ternary 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 (PIMNT36/36/28) thin films with high-Curie point were prepared on Pt/Ti/SiO2/Si substrates and dense morphology and remarkable dielectric, ferroelectric, piezoelectric, and pyroelectric properties were obtained. Under optimized processing temperature of 650 °C, the remnant polarization of the films reached 19.15 μC/cm2 and large pyroelectric coefficient up to 6.85 × 10–4 C/m2 K was obtained with high figure of merit (Detectivity F d reached 1.96 × 10–5 Pa−1/2 @ 100 Hz for 1 μm-thick PIMNT36/36/28 film). Piezoresponse force microscopy revealed an obvious domain reversal under in situ electric field with "butterfly" shape local piezoelectric response. The superior global performance makes the present PIMNT36/36/28 thin film quite favorable for integrated pyroelectric devices' applications. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s00339-022-05668-w
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1
    Subjects:
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Infrared array detectors
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      – SubjectFull: Piezoresponse force microscopy
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      – SubjectFull: Pyroelectric detectors
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      – SubjectFull: Piezoelectric detectors
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      – SubjectFull: Lead titanate
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      – TitleFull: Micron-thick ternary relaxor 0.36Pb(In1/2Nb1/2)O3–0.36Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 thin films with superior pyroelectric response on Si substrate.
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              Text: Jun2022
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