Bibliographic Details
| Title: |
Infrared Colloidal Quantum Dot Image Sensors. |
| Authors: |
Pejovic, Vladimir1, Georgitzikis, Epimitheas1 epimitheas.georgitzikis@imec.be, Lee, Jiwon1, Lieberman, Itai1, Cheyns, David1, Heremans, Paul1, Malinowski, Pawel E.1 pawel.malinowski@imec.be |
| Source: |
IEEE Transactions on Electron Devices. Jun2022, Vol. 69 Issue 6, p2840-2850. 11p. |
| Subjects: |
Semiconductor nanocrystals, Image sensors, Infrared technology, Flip chip technology, Quantum dots, Infrared imaging, Quantum efficiency |
| Abstract: |
Quantum dots (QDs) have been explored for many photonic applications, both as emitters and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent candidates to disrupt the field of imaging. This review article illustrates the state of technology for infrared image sensors based on colloidal QD absorbers. Up to now, this wavelength range has been dominated by III–V and II–VI imagers realized using flip-chip bonding. Monolithic integration of QDs with the readout chip promises to make short-wave infrared (SWIR) imaging accessible to applications that could previously not even consider this modality. Furthermore, QD sensors show already state-of-the-art figures of merit, such as sub-2- $\mu \text{m}$ pixel pitch and multimegapixel resolution. External quantum efficiencies already exceed 60% at 1400 nm. With the potential to increase the spectrum into extended SWIR and even mid-wave infrared, QD imagers are a very interesting and dynamic technology segment. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
