ZnS stacking order influence on the formation of Zn-poor and Zn-rich Cu2ZnSnS4 phase.
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| Title: | ZnS stacking order influence on the formation of Zn-poor and Zn-rich Cu |
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| Authors: | Zaki, Mohamed Yassine1 (AUTHOR) yassine.zaki@infim.ro, El Khouja, Outman1,2 (AUTHOR), Nouneh, Khalid2 (AUTHOR), Ebn Touhami, Mohamed2 (AUTHOR), Matei, Elena1 (AUTHOR), Azmi, Sara3 (AUTHOR), Rusu, Madalin Ion4 (AUTHOR), Grigorescu, Cristiana Eugenia Ana4 (AUTHOR), Briche, Samir5 (AUTHOR), Boutamart, Mustapha5 (AUTHOR), Badica, Petre1 (AUTHOR), Burdusel, Mihail1 (AUTHOR), Secu, Mihail1 (AUTHOR), Pintilie, Lucian1 (AUTHOR), Galca, Aurelian Catalin1 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. May2022, Vol. 33 Issue 15, p11989-12001. 13p. |
| Subjects: | Zinc sulfide, Scanning electron microscopes, Buffer layers, Surface morphology, Kesterite, X-ray diffraction |
| Abstract: | This paper reports the synthesis and characterization of Cu2ZnSnS4 (CZTS) absorber films, prepared by a two-step electrodeposition of a ZnS (zinc sulfide) binary and a CZT (copper, zinc and tin) ternary precursors on Mo/Ti/Si substrates. The as-electrodeposited ZnS/CZT and CZT/ZnS stacks were thermally treated in a tubular furnace in sulfur environment at 550 °C. The role of the ZnS buffer layer is to provide a zinc and sulfur reservoir, needed to complete the formation of kesterite phase. X-ray diffraction and Raman analyses revealed the formation of the CZTS phase. The surface morphology and chemical composition of the films were studied using a scanning electron microscope. The bandgap values inferred from diffuse reflectance data, are discussed with respect to the stoichiometry which is considerably affected by the order of the stacks. Room-temperature photoluminescence of the CZT/ZnS sample showed a board PL band of 1.51 eV. It was found that the film with a ZnS layer on top is preferred for the formation of a Zn-rich single CZTS phase. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This paper reports the synthesis and characterization of Cu2ZnSnS4 (CZTS) absorber films, prepared by a two-step electrodeposition of a ZnS (zinc sulfide) binary and a CZT (copper, zinc and tin) ternary precursors on Mo/Ti/Si substrates. The as-electrodeposited ZnS/CZT and CZT/ZnS stacks were thermally treated in a tubular furnace in sulfur environment at 550 °C. The role of the ZnS buffer layer is to provide a zinc and sulfur reservoir, needed to complete the formation of kesterite phase. X-ray diffraction and Raman analyses revealed the formation of the CZTS phase. The surface morphology and chemical composition of the films were studied using a scanning electron microscope. The bandgap values inferred from diffuse reflectance data, are discussed with respect to the stoichiometry which is considerably affected by the order of the stacks. Room-temperature photoluminescence of the CZT/ZnS sample showed a board PL band of 1.51 eV. It was found that the film with a ZnS layer on top is preferred for the formation of a Zn-rich single CZTS phase. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-022-08160-6 |
