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Polar Heterostructure for Multifunction Devices: Theoretical Studies.

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Bibliographic Details
Title: Polar Heterostructure for Multifunction Devices: Theoretical Studies.
Authors: Yuh-Renn Wu1, Singh, Jasprit1
Source: IEEE Transactions on Electron Devices. Feb2005, Vol. 52 Issue 2, p284-293. 10p.
Subjects: Gallium arsenide semiconductors, Transistors, Heterostructures, Electrical engineering materials, Piezoelectric semiconductors, Silicon
Abstract: In this paper, we examine the potential of devices based on heterostructures made from highly polar materials and semiconductors. Our calculations show that such functional devices have superior sensor properties and transistor properties. The basis device examined is based on the use of a thin oxide with high piezoelectric coefficients or pyroelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage, temperature, or stress. We examine the performance of three classes of heterostructures that form the basis of important semiconductor technologies: 1) Si-SiO2-BaTiO3 heterostructure junctions that would be an important breakthrough for silicon sensor technology; 2) GaN-A1N-BaTiO3 heterostructure junctions that would be important especially in high temperature sensor application; and 3) GaAs-AIGaAs-BaTiO3 heterostructure field effect transistors. The calculations show that with a very thin polar material layer we can have a highly sensitive sensor and transistor. For optimum performance, the polar material (piezoelectric or pyroelectric) layer thickness should be ∼ 30 Å. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this paper, we examine the potential of devices based on heterostructures made from highly polar materials and semiconductors. Our calculations show that such functional devices have superior sensor properties and transistor properties. The basis device examined is based on the use of a thin oxide with high piezoelectric coefficients or pyroelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage, temperature, or stress. We examine the performance of three classes of heterostructures that form the basis of important semiconductor technologies: 1) Si-SiO2-BaTiO3 heterostructure junctions that would be an important breakthrough for silicon sensor technology; 2) GaN-A1N-BaTiO3 heterostructure junctions that would be important especially in high temperature sensor application; and 3) GaAs-AIGaAs-BaTiO3 heterostructure field effect transistors. The calculations show that with a very thin polar material layer we can have a highly sensitive sensor and transistor. For optimum performance, the polar material (piezoelectric or pyroelectric) layer thickness should be ∼ 30 Å. [ABSTRACT FROM AUTHOR]
ISSN:00189383
DOI:10.1109/TED.2004.842546