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Polar Heterostructure for Multifunction Devices: Theoretical Studies.

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Title: Polar Heterostructure for Multifunction Devices: Theoretical Studies.
Authors: Yuh-Renn Wu1, Singh, Jasprit1
Source: IEEE Transactions on Electron Devices. Feb2005, Vol. 52 Issue 2, p284-293. 10p.
Subjects: Gallium arsenide semiconductors, Transistors, Heterostructures, Electrical engineering materials, Piezoelectric semiconductors, Silicon
Abstract: In this paper, we examine the potential of devices based on heterostructures made from highly polar materials and semiconductors. Our calculations show that such functional devices have superior sensor properties and transistor properties. The basis device examined is based on the use of a thin oxide with high piezoelectric coefficients or pyroelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage, temperature, or stress. We examine the performance of three classes of heterostructures that form the basis of important semiconductor technologies: 1) Si-SiO2-BaTiO3 heterostructure junctions that would be an important breakthrough for silicon sensor technology; 2) GaN-A1N-BaTiO3 heterostructure junctions that would be important especially in high temperature sensor application; and 3) GaAs-AIGaAs-BaTiO3 heterostructure field effect transistors. The calculations show that with a very thin polar material layer we can have a highly sensitive sensor and transistor. For optimum performance, the polar material (piezoelectric or pyroelectric) layer thickness should be ∼ 30 Å. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Polar Heterostructure for Multifunction Devices: Theoretical Studies.
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  Data: <searchLink fieldCode="AR" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+Jasprit%22">Singh, Jasprit</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Feb2005, Vol. 52 Issue 2, p284-293. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Gallium+arsenide+semiconductors%22">Gallium arsenide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+engineering+materials%22">Electrical engineering materials</searchLink><br /><searchLink fieldCode="DE" term="%22Piezoelectric+semiconductors%22">Piezoelectric semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink>
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  Data: In this paper, we examine the potential of devices based on heterostructures made from highly polar materials and semiconductors. Our calculations show that such functional devices have superior sensor properties and transistor properties. The basis device examined is based on the use of a thin oxide with high piezoelectric coefficients or pyroelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage, temperature, or stress. We examine the performance of three classes of heterostructures that form the basis of important semiconductor technologies: 1) Si-SiO2-BaTiO3 heterostructure junctions that would be an important breakthrough for silicon sensor technology; 2) GaN-A1N-BaTiO3 heterostructure junctions that would be important especially in high temperature sensor application; and 3) GaAs-AIGaAs-BaTiO3 heterostructure field effect transistors. The calculations show that with a very thin polar material layer we can have a highly sensitive sensor and transistor. For optimum performance, the polar material (piezoelectric or pyroelectric) layer thickness should be ∼ 30 Å. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2004.842546
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 284
    Subjects:
      – SubjectFull: Gallium arsenide semiconductors
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Heterostructures
        Type: general
      – SubjectFull: Electrical engineering materials
        Type: general
      – SubjectFull: Piezoelectric semiconductors
        Type: general
      – SubjectFull: Silicon
        Type: general
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      – TitleFull: Polar Heterostructure for Multifunction Devices: Theoretical Studies.
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              Text: Feb2005
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              Y: 2005
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