APA (7th ed.) Citation

Kim, J. P., Sim, J., Bidenko, P., Geum, D., Kim, S. K., Shim, J., . . . Kim, S. (2022). Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability. IEEE Electron Device Letters, 43(11), 1834. https://doi.org/10.1109/LED.2022.3204436

Chicago Style (17th ed.) Citation

Kim, Joon Pyo, Jaeho Sim, Pavlo Bidenko, Dae-Myeong Geum, Seong Kwang Kim, Joonsup Shim, Jongmin Kim, and Sanghyeon Kim. "Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability." IEEE Electron Device Letters 43, no. 11 (2022): 1834. https://doi.org/10.1109/LED.2022.3204436.

MLA (9th ed.) Citation

Kim, Joon Pyo, et al. "Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability." IEEE Electron Device Letters, vol. 43, no. 11, 2022, p. 1834, https://doi.org/10.1109/LED.2022.3204436.