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Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability.

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Title: Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability.
Authors: Kim, Joon Pyo1 (AUTHOR), Sim, Jaeho1 (AUTHOR), Bidenko, Pavlo1 (AUTHOR), Geum, Dae-Myeong1 (AUTHOR), Kim, Seong Kwang1 (AUTHOR), Shim, Joonsup1 (AUTHOR), Kim, Jongmin2 (AUTHOR) jongmin.kim@kanc.re.kr, Kim, Sanghyeon1 (AUTHOR) shkim.ee@kaist.ac.kr
Source: IEEE Electron Device Letters. Nov2022, Vol. 43 Issue 11, p1834-1837. 4p.
Subjects: Cell junctions, Indium gallium arsenide, Scalability, Impact ionization, Temporoparietal junction, Random access memory
Abstract: In this work, we demonstrated capacitor-less 4F2 2-terminal InGaAs npn junction DRAM through careful device design. Using epitaxially grown InGaAs which have a steep junction, fabricated InGaAs bistable resistor (biristor) DRAM showed low voltage operation (~2 V), fast switching speed (<20 ns), long-term retention (103 s at 85 °C), and high endurance (>1010 cycles) with a high sensing margin. Considering this feasibility study, we believe that InGaAs $\text{n}^{+}$ pn+ junction DRAM could be a good technological option for future scalable 3D DRAM. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability.
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kim%2C+Joon+Pyo%22&quot;&gt;Kim, Joon Pyo&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Sim%2C+Jaeho%22&quot;&gt;Sim, Jaeho&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Bidenko%2C+Pavlo%22&quot;&gt;Bidenko, Pavlo&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Geum%2C+Dae-Myeong%22&quot;&gt;Geum, Dae-Myeong&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kim%2C+Seong+Kwang%22&quot;&gt;Kim, Seong Kwang&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Shim%2C+Joonsup%22&quot;&gt;Shim, Joonsup&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kim%2C+Jongmin%22&quot;&gt;Kim, Jongmin&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; jongmin.kim@kanc.re.kr&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kim%2C+Sanghyeon%22&quot;&gt;Kim, Sanghyeon&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; shkim.ee@kaist.ac.kr&lt;/i&gt;
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22IEEE+Electron+Device+Letters%22&quot;&gt;IEEE Electron Device Letters&lt;/searchLink&gt;. Nov2022, Vol. 43 Issue 11, p1834-1837. 4p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Cell+junctions%22&quot;&gt;Cell junctions&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Indium+gallium+arsenide%22&quot;&gt;Indium gallium arsenide&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Scalability%22&quot;&gt;Scalability&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Impact+ionization%22&quot;&gt;Impact ionization&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Temporoparietal+junction%22&quot;&gt;Temporoparietal junction&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Random+access+memory%22&quot;&gt;Random access memory&lt;/searchLink&gt;
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  Label: Abstract
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  Data: In this work, we demonstrated capacitor-less 4F2 2-terminal InGaAs npn junction DRAM through careful device design. Using epitaxially grown InGaAs which have a steep junction, fabricated InGaAs bistable resistor (biristor) DRAM showed low voltage operation (~2 V), fast switching speed (&lt;20 ns), long-term retention (103 s at 85 &#176;C), and high endurance (&gt;1010 cycles) with a high sensing margin. Considering this feasibility study, we believe that InGaAs $\text{n}^{+}$ pn+ junction DRAM could be a good technological option for future scalable 3D DRAM. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2022.3204436
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 1834
    Subjects:
      – SubjectFull: Cell junctions
        Type: general
      – SubjectFull: Indium gallium arsenide
        Type: general
      – SubjectFull: Scalability
        Type: general
      – SubjectFull: Impact ionization
        Type: general
      – SubjectFull: Temporoparietal junction
        Type: general
      – SubjectFull: Random access memory
        Type: general
    Titles:
      – TitleFull: Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability.
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            NameFull: Kim, Joon Pyo
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            NameFull: Sim, Jaeho
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            NameFull: Bidenko, Pavlo
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            NameFull: Geum, Dae-Myeong
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            NameFull: Kim, Seong Kwang
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            NameFull: Shim, Joonsup
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            NameFull: Kim, Jongmin
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            NameFull: Kim, Sanghyeon
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            – D: 01
              M: 11
              Text: Nov2022
              Type: published
              Y: 2022
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            – TitleFull: IEEE Electron Device Letters
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