Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.
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| Title: | Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer. |
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| Authors: | Lee, Ke-Jing1,2 (AUTHOR), Lin, Wei-Shao1 (AUTHOR), Wang, Li-Wen1 (AUTHOR), Lin, Hsin-Ni3 (AUTHOR), Wang, Yeong-Her1,2 (AUTHOR) yhw@ee.ncku.edu.tw |
| Source: | Nanomaterials (2079-4991). Dec2022, Vol. 12 Issue 24, p4412. 10p. |
| Subjects: | Thin films, Sol-gel processes, Electrochromic devices, Low voltage systems |
| Abstract: | The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano12244412 |
