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Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.

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Title: Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.
Authors: Lee, Ke-Jing1,2 (AUTHOR), Lin, Wei-Shao1 (AUTHOR), Wang, Li-Wen1 (AUTHOR), Lin, Hsin-Ni3 (AUTHOR), Wang, Yeong-Her1,2 (AUTHOR) yhw@ee.ncku.edu.tw
Source: Nanomaterials (2079-4991). Dec2022, Vol. 12 Issue 24, p4412. 10p.
Subjects: Thin films, Sol-gel processes, Electrochromic devices, Low voltage systems
Abstract: The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.
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  Data: <searchLink fieldCode="AR" term="%22Lee%2C+Ke-Jing%22">Lee, Ke-Jing</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Wei-Shao%22">Lin, Wei-Shao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Li-Wen%22">Wang, Li-Wen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Hsin-Ni%22">Lin, Hsin-Ni</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Yeong-Her%22">Wang, Yeong-Her</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yhw@ee.ncku.edu.tw</i>
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+processes%22">Sol-gel processes</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochromic+devices%22">Electrochromic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Low+voltage+systems%22">Low voltage systems</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano12244412
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Sol-gel processes
        Type: general
      – SubjectFull: Electrochromic devices
        Type: general
      – SubjectFull: Low voltage systems
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    Titles:
      – TitleFull: Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.
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            NameFull: Wang, Li-Wen
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            NameFull: Wang, Yeong-Her
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            – D: 15
              M: 12
              Text: Dec2022
              Type: published
              Y: 2022
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              Value: 12
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