Ferroelectric Devices for Content-Addressable Memory.
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| Title: | Ferroelectric Devices for Content-Addressable Memory. |
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| Authors: | Tarkov, Mikhail1 (AUTHOR) tarkov@isp.nsc.ru, Tikhonenko, Fedor1 (AUTHOR), Popov, Vladimir1 (AUTHOR), Antonov, Valentin1 (AUTHOR), Miakonkikh, Andrey2 (AUTHOR), Rudenko, Konstantin2 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Dec2022, Vol. 12 Issue 24, p4488. 18p. |
| Subjects: | Associative storage, Ferroelectric devices, Computer storage devices, Tunnel diodes, Ferroelectric materials |
| Abstract: | In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano12244488 |
