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Ferroelectric Devices for Content-Addressable Memory.

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Title: Ferroelectric Devices for Content-Addressable Memory.
Authors: Tarkov, Mikhail1 (AUTHOR) tarkov@isp.nsc.ru, Tikhonenko, Fedor1 (AUTHOR), Popov, Vladimir1 (AUTHOR), Antonov, Valentin1 (AUTHOR), Miakonkikh, Andrey2 (AUTHOR), Rudenko, Konstantin2 (AUTHOR)
Source: Nanomaterials (2079-4991). Dec2022, Vol. 12 Issue 24, p4488. 18p.
Subjects: Associative storage, Ferroelectric devices, Computer storage devices, Tunnel diodes, Ferroelectric materials
Abstract: In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Data: Ferroelectric Devices for Content-Addressable Memory.
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  Data: <searchLink fieldCode="AR" term="%22Tarkov%2C+Mikhail%22">Tarkov, Mikhail</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> tarkov@isp.nsc.ru</i><br /><searchLink fieldCode="AR" term="%22Tikhonenko%2C+Fedor%22">Tikhonenko, Fedor</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Popov%2C+Vladimir%22">Popov, Vladimir</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Antonov%2C+Valentin%22">Antonov, Valentin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Miakonkikh%2C+Andrey%22">Miakonkikh, Andrey</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rudenko%2C+Konstantin%22">Rudenko, Konstantin</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Dec2022, Vol. 12 Issue 24, p4488. 18p.
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  Data: <searchLink fieldCode="DE" term="%22Associative+storage%22">Associative storage</searchLink><br /><searchLink fieldCode="DE" term="%22Ferroelectric+devices%22">Ferroelectric devices</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Tunnel+diodes%22">Tunnel diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Ferroelectric+materials%22">Ferroelectric materials</searchLink>
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  Label: Abstract
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  Data: In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano12244488
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      – Code: eng
        Text: English
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        PageCount: 18
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        Type: general
      – SubjectFull: Ferroelectric devices
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      – SubjectFull: Computer storage devices
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      – SubjectFull: Tunnel diodes
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      – SubjectFull: Ferroelectric materials
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      – TitleFull: Ferroelectric Devices for Content-Addressable Memory.
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              Text: Dec2022
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              Y: 2022
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