Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
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| Title: | Engineering the resistive switching properties of 2D WS |
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| Authors: | Cao, Qing1 (AUTHOR), Zou, Pengfei1 (AUTHOR), Li, Pengcheng2 (AUTHOR), Xiong, Limiao1 (AUTHOR), Bi, Hailin1 (AUTHOR), Wu, Jun1 (AUTHOR) wujun@hfut.edu.cn |
| Source: | Journal of Materials Science: Materials in Electronics. Jan2023, Vol. 34 Issue 3, p1-9. 9p. |
| Subjects: | Band gaps, Memristors, Electrical conductivity transitions, Centrifugation, Space charge, Energy bands, Charge transfer |
| Abstract: | WS2 with different layers were prepared by liquid-phase cascade centrifugation and then applied to fabricate Ag/WS2/Cu memristors. The correlation between WS2 layers and band gap was studied and the influence of the change in WS2 band gap on the switching characteristics was analyzed. It is found that as the thickness and layer number of WS2 decrease, the band gap gradually increases. The Ag/WS2/Cu devices exhibit bipolar resistive switching behavior. The larger the band gap of WS2, the smaller the switching voltage and the larger the switching ratio of the corresponding memristors. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism. In addition, the charge transfer process is further explained with the energy band diagram and the differential charge density of Ag/WS2/Cu. This work can lay a theoretical foundation for the design and optimization of the switching performance of transition metal dichalcogenides (TMDs) memristors. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | WS2 with different layers were prepared by liquid-phase cascade centrifugation and then applied to fabricate Ag/WS2/Cu memristors. The correlation between WS2 layers and band gap was studied and the influence of the change in WS2 band gap on the switching characteristics was analyzed. It is found that as the thickness and layer number of WS2 decrease, the band gap gradually increases. The Ag/WS2/Cu devices exhibit bipolar resistive switching behavior. The larger the band gap of WS2, the smaller the switching voltage and the larger the switching ratio of the corresponding memristors. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism. In addition, the charge transfer process is further explained with the energy band diagram and the differential charge density of Ag/WS2/Cu. This work can lay a theoretical foundation for the design and optimization of the switching performance of transition metal dichalcogenides (TMDs) memristors. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-022-09612-9 |
