APA (7th ed.) Citation

Cao, Q., Zou, P., Li, P., Xiong, L., Bi, H., & Wu, J. (2023). Engineering the resistive switching properties of 2D WS2 memristor: Role of band gap. Journal of Materials Science: Materials in Electronics, 34(3), 1. https://doi.org/10.1007/s10854-022-09612-9

Chicago Style (17th ed.) Citation

Cao, Qing, Pengfei Zou, Pengcheng Li, Limiao Xiong, Hailin Bi, and Jun Wu. "Engineering the Resistive Switching Properties of 2D WS2 Memristor: Role of Band Gap." Journal of Materials Science: Materials in Electronics 34, no. 3 (2023): 1. https://doi.org/10.1007/s10854-022-09612-9.

MLA (9th ed.) Citation

Cao, Qing, et al. "Engineering the Resistive Switching Properties of 2D WS2 Memristor: Role of Band Gap." Journal of Materials Science: Materials in Electronics, vol. 34, no. 3, 2023, p. 1, https://doi.org/10.1007/s10854-022-09612-9.