Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.
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| Title: | Engineering the resistive switching properties of 2D WS |
|---|---|
| Authors: | Cao, Qing1 (AUTHOR), Zou, Pengfei1 (AUTHOR), Li, Pengcheng2 (AUTHOR), Xiong, Limiao1 (AUTHOR), Bi, Hailin1 (AUTHOR), Wu, Jun1 (AUTHOR) wujun@hfut.edu.cn |
| Source: | Journal of Materials Science: Materials in Electronics. Jan2023, Vol. 34 Issue 3, p1-9. 9p. |
| Subjects: | Band gaps, Memristors, Electrical conductivity transitions, Centrifugation, Space charge, Energy bands, Charge transfer |
| Abstract: | WS2 with different layers were prepared by liquid-phase cascade centrifugation and then applied to fabricate Ag/WS2/Cu memristors. The correlation between WS2 layers and band gap was studied and the influence of the change in WS2 band gap on the switching characteristics was analyzed. It is found that as the thickness and layer number of WS2 decrease, the band gap gradually increases. The Ag/WS2/Cu devices exhibit bipolar resistive switching behavior. The larger the band gap of WS2, the smaller the switching voltage and the larger the switching ratio of the corresponding memristors. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism. In addition, the charge transfer process is further explained with the energy band diagram and the differential charge density of Ag/WS2/Cu. This work can lay a theoretical foundation for the design and optimization of the switching performance of transition metal dichalcogenides (TMDs) memristors. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 161418804 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Engineering the resistive switching properties of 2D WS<subscript>2</subscript> memristor: role of band gap. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Cao%2C+Qing%22">Cao, Qing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zou%2C+Pengfei%22">Zou, Pengfei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Pengcheng%22">Li, Pengcheng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xiong%2C+Limiao%22">Xiong, Limiao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bi%2C+Hailin%22">Bi, Hailin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Jun%22">Wu, Jun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> wujun@hfut.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jan2023, Vol. 34 Issue 3, p1-9. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+conductivity+transitions%22">Electrical conductivity transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Centrifugation%22">Centrifugation</searchLink><br /><searchLink fieldCode="DE" term="%22Space+charge%22">Space charge</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+bands%22">Energy bands</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+transfer%22">Charge transfer</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: WS2 with different layers were prepared by liquid-phase cascade centrifugation and then applied to fabricate Ag/WS2/Cu memristors. The correlation between WS2 layers and band gap was studied and the influence of the change in WS2 band gap on the switching characteristics was analyzed. It is found that as the thickness and layer number of WS2 decrease, the band gap gradually increases. The Ag/WS2/Cu devices exhibit bipolar resistive switching behavior. The larger the band gap of WS2, the smaller the switching voltage and the larger the switching ratio of the corresponding memristors. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism. In addition, the charge transfer process is further explained with the energy band diagram and the differential charge density of Ag/WS2/Cu. This work can lay a theoretical foundation for the design and optimization of the switching performance of transition metal dichalcogenides (TMDs) memristors. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-022-09612-9 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Subjects: – SubjectFull: Band gaps Type: general – SubjectFull: Memristors Type: general – SubjectFull: Electrical conductivity transitions Type: general – SubjectFull: Centrifugation Type: general – SubjectFull: Space charge Type: general – SubjectFull: Energy bands Type: general – SubjectFull: Charge transfer Type: general Titles: – TitleFull: Engineering the resistive switching properties of 2D WS2 memristor: role of band gap. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cao, Qing – PersonEntity: Name: NameFull: Zou, Pengfei – PersonEntity: Name: NameFull: Li, Pengcheng – PersonEntity: Name: NameFull: Xiong, Limiao – PersonEntity: Name: NameFull: Bi, Hailin – PersonEntity: Name: NameFull: Wu, Jun IsPartOfRelationships: – BibEntity: Dates: – D: 20 M: 01 Text: Jan2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 3 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
