Effect of BaO–2B2O3 sintering aid on the structural and electrical properties of high temperature piezoelectric ceramic Bi3TiNbO9.
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| Title: | Effect of BaO–2B |
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| Authors: | Tao, M.1,2 (AUTHOR), Pan, C. B.1,2 (AUTHOR), Yin, L. H.1 (AUTHOR), Song, W. H.1 (AUTHOR), Zhu, X. B.1 (AUTHOR), Yang, J.1 (AUTHOR) jyang@issp.ac.cn, Sun, Y. P.1,3,4 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Feb2023, Vol. 34 Issue 6, p1-11. 11p. |
| Abstract: | High temperature piezoelectric ceramic Bi3TiNbO9 with the addition of BaO–2B2O3 as sintering aid was prepared by a solid-state reaction method. The addition of BaO–2B2O3 can promote the growth of grains and increase the density of the samples. Both the ferroelectric and piezoelectric properties of Bi3TiNbO9 with the addition of BaO–2B2O3 increase remarkably compared with Bi3TiNbO9. The maximum remanent polarization and piezoelectric coefficient of the sample with the addition of 2 wt% BaO–2B2O3 can reach 8.67 µC/cm2 of 14 pC/N, which is about 4 and 7 times as large as the corresponding values of Bi3TiNbO9. The increased electrical properties can be ascribed to the dense morphology, the increased structural distortion, and the reduced concentration of oxygen vacancies. This study is useful for the preparation of high-temperature piezoelectric ceramic Bi3TiNbO9 with reasonable electrical properties. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | High temperature piezoelectric ceramic Bi3TiNbO9 with the addition of BaO–2B2O3 as sintering aid was prepared by a solid-state reaction method. The addition of BaO–2B2O3 can promote the growth of grains and increase the density of the samples. Both the ferroelectric and piezoelectric properties of Bi3TiNbO9 with the addition of BaO–2B2O3 increase remarkably compared with Bi3TiNbO9. The maximum remanent polarization and piezoelectric coefficient of the sample with the addition of 2 wt% BaO–2B2O3 can reach 8.67 µC/cm2 of 14 pC/N, which is about 4 and 7 times as large as the corresponding values of Bi3TiNbO9. The increased electrical properties can be ascribed to the dense morphology, the increased structural distortion, and the reduced concentration of oxygen vacancies. This study is useful for the preparation of high-temperature piezoelectric ceramic Bi3TiNbO9 with reasonable electrical properties. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-023-09946-y |
