Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.
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| Title: | Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation. |
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| Authors: | Belafhaili, Amine1 (AUTHOR) a.belafhaili@um5r.ac.ma, Laanab, Larbi2 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Feb2023, Vol. 34 Issue 5, p1-6. 6p. |
| Abstract: | In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge+ (35 KeV, 1 × 1015 cm−2) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence (PL) and transmission electron microscopy (TEM) in weak-beam dark-field (WBDF) mode, we show that, EOR defects, formed just beneath the former crystal to amorphous (c/a) interface, manifest several configurations depending on the thermal budget. For samples annealed at low thermal budget, PL measurements show that EOR defects consist only of various nano-self-interstitial clusters. However, during a middle annealing budget, there is appearance of {113} defects in addition to clusters. At a critical high thermal budget, the plan-view WBDF micrographs reveal that {113} defects are transformed into dislocation loops (DL). After that, as the annealing progresses, the different types of EOR defects grow in size, where their density decreases and their structure changes. This thermal behavior of EOR defects can be explained by the Ostwald ripening mechanism. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge+ (35 KeV, 1 × 1015 cm−2) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence (PL) and transmission electron microscopy (TEM) in weak-beam dark-field (WBDF) mode, we show that, EOR defects, formed just beneath the former crystal to amorphous (c/a) interface, manifest several configurations depending on the thermal budget. For samples annealed at low thermal budget, PL measurements show that EOR defects consist only of various nano-self-interstitial clusters. However, during a middle annealing budget, there is appearance of {113} defects in addition to clusters. At a critical high thermal budget, the plan-view WBDF micrographs reveal that {113} defects are transformed into dislocation loops (DL). After that, as the annealing progresses, the different types of EOR defects grow in size, where their density decreases and their structure changes. This thermal behavior of EOR defects can be explained by the Ostwald ripening mechanism. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-022-09794-2 |
