Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides.

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Title:	Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides.
Authors:	Li, J. Z.¹ jzli@sarnoff.com, Martinelli, R. U.¹, Khalfin, V. B.¹, Shellenbarger, Z.¹, Braun, A. M.¹, Capewell, D.¹, Willner, B. I.¹, Abeles, J. H.¹
Source:	Journal of Electronic Materials. Feb2005, Vol. 34 Issue 2, p156-160. 5p. 1 Diagram, 1 Chart, 5 Graphs.
Subjects:	Quantum wells, Lasers, Metallurgical analysis, Metal organic chemical vapor deposition, Vapor-plating, Photoluminescence, Secondary ion mass spectrometry
Abstract:	Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 1015 cm-3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 x 1018 cm-3 and 3 x 1018 cm-3, respectively, for Al0.4Ga0.6As layers. Double-crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-µm X 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

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Abstract:	Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 1015 cm-3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 x 1018 cm-3 and 3 x 1018 cm-3, respectively, for Al0.4Ga0.6As layers. Double-crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-µm X 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics. [ABSTRACT FROM AUTHOR]
ISSN:	03615235
DOI:	10.1007/s11664-005-0227-x