Bibliographic Details
| Title: |
Study of Temperature Dependence of Bump Bonding for the BTeV Pixel Detector. |
| Authors: |
Thrqueti, M.1 turqueti@fnal.gov, Cihangir, S.1, Kwan, S.1, Appel, J. A.1, Cardoso, G.1, Christian, D. C.1, Hall, B. K.1, Zimmermann, S.1 |
| Source: |
IEEE Transactions on Nuclear Science. Oct2004 Part 1 of 4, Vol. 51 Issue 5, p2161-2167. 7p. |
| Subjects: |
Silicon, Detectors, Sealing (Technology), Native element minerals, Engineering instruments, Solder & soldering |
| Abstract: |
The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the behavior of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposure to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to a 90Sr source. We report the results from these studies as well as the noise and threshold behavior of the pixel readout at various temperatures. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
