High-Resolution Laser Interference Ablation and Amorphization of Silicon.

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Title: High-Resolution Laser Interference Ablation and Amorphization of Silicon.
Authors: Blumenstein, Andreas1 (AUTHOR), Simon, Peter1 (AUTHOR), Ihlemann, Jürgen1 (AUTHOR) juergen.ihlemann@ifnano.de
Source: Nanomaterials (2079-4991). Aug2023, Vol. 13 Issue 15, p2240. 10p.
Subjects: Laser ablation, Amorphization, Femtosecond pulses, Silicon surfaces, Surface structure, Femtosecond lasers
Abstract: The laser interference patterning of a silicon surface via UV femtosecond pulse irradiation, resulting in 350 nm periodic structures, is demonstrated. The structuring process was performed using a laser with a 450 fs pulse duration at a wavelength of 248 nm in combination with a mask projection setup. Depending on the laser fluence, single-pulse irradiation leads to amorphization, structure formation via lateral melt flow or the formation of voids via peculiar melt coalescence. Through multipulse irradiation, combined patterns of interference structures and laser-induced periodic surface structures (LIPSS) are observed. [ABSTRACT FROM AUTHOR]
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Abstract:The laser interference patterning of a silicon surface via UV femtosecond pulse irradiation, resulting in 350 nm periodic structures, is demonstrated. The structuring process was performed using a laser with a 450 fs pulse duration at a wavelength of 248 nm in combination with a mask projection setup. Depending on the laser fluence, single-pulse irradiation leads to amorphization, structure formation via lateral melt flow or the formation of voids via peculiar melt coalescence. Through multipulse irradiation, combined patterns of interference structures and laser-induced periodic surface structures (LIPSS) are observed. [ABSTRACT FROM AUTHOR]
ISSN:20794991
DOI:10.3390/nano13152240