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Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.

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Title: Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.
Authors: Nehra, Simran1,2 (AUTHOR), Kumar, Sumit1,2 (AUTHOR), Shrivastava, Shikha1,2 (AUTHOR), Gangwar, Sunil3 (AUTHOR), Yadav, C.S.3 (AUTHOR), Arora, A.4 (AUTHOR), Malik, V.K.4 (AUTHOR), Dogra, Anjana1,2 (AUTHOR) anjanad@nplindia.org
Source: Materials Chemistry & Physics. Jan2024, Vol. 311, pN.PAG-N.PAG. 1p.
Subjects: Buffer layers, Oxidation states, Heterostructures
Abstract: Buffer layers, capping layers, gate voltage, etc., can all have a major impact on the interface conducting properties of oxide heterostructures; in some cases, the thickness of a layer significantly alters the transport properties. Here, we report the impact of the SrSnO 3 buffer layer of different thicknesses at the LAO/STO interface. The metallic behavior is observed in heterostructures with a buffer layer thickness smaller than 4 uc and the interface becomes insulating for thickness ≥ 4 uc. XPS results showed that the oxidation state of the Sn atom had changed in the insulating samples. [Display omitted] • LAO/STO interface exhibits a resistance of 10 kΩ , while with 1 uc buffer layer of SrSnO 3 , it reduces to 4 kΩ. • Conducting LAO/STO interface turns insulating with insertion of 4 uc buffer layer of SrSnO 3. • Metal-to-insulator transition has been explained on the basis of multivalent Sn. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Buffer layers, capping layers, gate voltage, etc., can all have a major impact on the interface conducting properties of oxide heterostructures; in some cases, the thickness of a layer significantly alters the transport properties. Here, we report the impact of the SrSnO 3 buffer layer of different thicknesses at the LAO/STO interface. The metallic behavior is observed in heterostructures with a buffer layer thickness smaller than 4 uc and the interface becomes insulating for thickness ≥ 4 uc. XPS results showed that the oxidation state of the Sn atom had changed in the insulating samples. [Display omitted] • LAO/STO interface exhibits a resistance of 10 kΩ , while with 1 uc buffer layer of SrSnO 3 , it reduces to 4 kΩ. • Conducting LAO/STO interface turns insulating with insertion of 4 uc buffer layer of SrSnO 3. • Metal-to-insulator transition has been explained on the basis of multivalent Sn. [ABSTRACT FROM AUTHOR]
ISSN:02540584
DOI:10.1016/j.matchemphys.2023.128513