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Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.

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Title: Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.
Authors: Nehra, Simran1,2 (AUTHOR), Kumar, Sumit1,2 (AUTHOR), Shrivastava, Shikha1,2 (AUTHOR), Gangwar, Sunil3 (AUTHOR), Yadav, C.S.3 (AUTHOR), Arora, A.4 (AUTHOR), Malik, V.K.4 (AUTHOR), Dogra, Anjana1,2 (AUTHOR) anjanad@nplindia.org
Source: Materials Chemistry & Physics. Jan2024, Vol. 311, pN.PAG-N.PAG. 1p.
Subjects: Buffer layers, Oxidation states, Heterostructures
Abstract: Buffer layers, capping layers, gate voltage, etc., can all have a major impact on the interface conducting properties of oxide heterostructures; in some cases, the thickness of a layer significantly alters the transport properties. Here, we report the impact of the SrSnO 3 buffer layer of different thicknesses at the LAO/STO interface. The metallic behavior is observed in heterostructures with a buffer layer thickness smaller than 4 uc and the interface becomes insulating for thickness ≥ 4 uc. XPS results showed that the oxidation state of the Sn atom had changed in the insulating samples. [Display omitted] • LAO/STO interface exhibits a resistance of 10 kΩ , while with 1 uc buffer layer of SrSnO 3 , it reduces to 4 kΩ. • Conducting LAO/STO interface turns insulating with insertion of 4 uc buffer layer of SrSnO 3. • Metal-to-insulator transition has been explained on the basis of multivalent Sn. [ABSTRACT FROM AUTHOR]
Copyright of Materials Chemistry & Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 173315709
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  Data: Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.
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  Data: <searchLink fieldCode="AR" term="%22Nehra%2C+Simran%22">Nehra, Simran</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+Sumit%22">Kumar, Sumit</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shrivastava%2C+Shikha%22">Shrivastava, Shikha</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gangwar%2C+Sunil%22">Gangwar, Sunil</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yadav%2C+C%2ES%2E%22">Yadav, C.S.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Arora%2C+A%2E%22">Arora, A.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Malik%2C+V%2EK%2E%22">Malik, V.K.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dogra%2C+Anjana%22">Dogra, Anjana</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> anjanad@nplindia.org</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Chemistry+%26+Physics%22">Materials Chemistry & Physics</searchLink>. Jan2024, Vol. 311, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Buffer+layers%22">Buffer layers</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation+states%22">Oxidation states</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Buffer layers, capping layers, gate voltage, etc., can all have a major impact on the interface conducting properties of oxide heterostructures; in some cases, the thickness of a layer significantly alters the transport properties. Here, we report the impact of the SrSnO 3 buffer layer of different thicknesses at the LAO/STO interface. The metallic behavior is observed in heterostructures with a buffer layer thickness smaller than 4 uc and the interface becomes insulating for thickness ≥ 4 uc. XPS results showed that the oxidation state of the Sn atom had changed in the insulating samples. [Display omitted] • LAO/STO interface exhibits a resistance of 10 kΩ , while with 1 uc buffer layer of SrSnO 3 , it reduces to 4 kΩ. • Conducting LAO/STO interface turns insulating with insertion of 4 uc buffer layer of SrSnO 3. • Metal-to-insulator transition has been explained on the basis of multivalent Sn. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Group: Ab
  Data: <i>Copyright of Materials Chemistry & Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.matchemphys.2023.128513
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
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      – SubjectFull: Buffer layers
        Type: general
      – SubjectFull: Oxidation states
        Type: general
      – SubjectFull: Heterostructures
        Type: general
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      – TitleFull: Artificial tailoring of MI transition at LAO/STO interface with SrSnO3 buffer layer.
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            NameFull: Nehra, Simran
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            NameFull: Kumar, Sumit
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            NameFull: Shrivastava, Shikha
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            NameFull: Gangwar, Sunil
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            NameFull: Yadav, C.S.
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            NameFull: Arora, A.
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            NameFull: Malik, V.K.
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            – D: 01
              M: 01
              Text: Jan2024
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              Y: 2024
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              Value: 311
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            – TitleFull: Materials Chemistry & Physics
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