Bibliographic Details
| Title: |
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy. |
| Authors: |
Kauer, M.1, Hooper, S. E.1, Bousquet, V.1, Johnson, K.1, Zellweger, C.1, Barnes, J. M.1, Windle, J.1, Smeeton, T. M.1, Heffernan, J. jonathan.heffernan@sharp.co.uk |
| Source: |
Electronics Letters (Institution of Engineering & Technology). 6/23/2005, Vol. 41 Issue 13, p739-741. 3p. |
| Subjects: |
Lasers, Light sources, Waveguides, Electric currents, Optoelectronic devices, Electronic systems |
| Abstract: |
The first continuous-wave InGaN multiple quantum well laser diodes grown by molecular beam epitaxy are reported. Ridge waveguide lasers are fabricated on free-standing GaN substrates and operated at room temperature under continuous-wave current injection. For 2.2 × 1000 μm lasers with highly reflective facet coatings a continuous-wave threshold current of 125 mA is obtained, corresponding to a threshold current density of 5.7 kA cm-2. The lasers have a thresh- old voltage of 8.6 V and lase at a wavelength of ∼ 405 nm for >3 min at 20° C. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
