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Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.

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Title: Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.
Authors: Kauer, M.1, Hooper, S. E.1, Bousquet, V.1, Johnson, K.1, Zellweger, C.1, Barnes, J. M.1, Windle, J.1, Smeeton, T. M.1, Heffernan, J. jonathan.heffernan@sharp.co.uk
Source: Electronics Letters (Institution of Engineering & Technology). 6/23/2005, Vol. 41 Issue 13, p739-741. 3p.
Subjects: Lasers, Light sources, Waveguides, Electric currents, Optoelectronic devices, Electronic systems
Abstract: The first continuous-wave InGaN multiple quantum well laser diodes grown by molecular beam epitaxy are reported. Ridge waveguide lasers are fabricated on free-standing GaN substrates and operated at room temperature under continuous-wave current injection. For 2.2 × 1000 μm lasers with highly reflective facet coatings a continuous-wave threshold current of 125 mA is obtained, corresponding to a threshold current density of 5.7 kA cm-2. The lasers have a thresh- old voltage of 8.6 V and lase at a wavelength of ∼ 405 nm for >3 min at 20° C. [ABSTRACT FROM AUTHOR]
Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 17416446
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.
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  Data: <searchLink fieldCode="AR" term="%22Kauer%2C+M%2E%22">Kauer, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hooper%2C+S%2E+E%2E%22">Hooper, S. E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bousquet%2C+V%2E%22">Bousquet, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Johnson%2C+K%2E%22">Johnson, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zellweger%2C+C%2E%22">Zellweger, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barnes%2C+J%2E+M%2E%22">Barnes, J. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Windle%2C+J%2E%22">Windle, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Smeeton%2C+T%2E+M%2E%22">Smeeton, T. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Heffernan%2C+J%2E%22">Heffernan, J.</searchLink><i> jonathan.heffernan@sharp.co.uk</i>
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Institution+of+Engineering+%26+Technology%29%22">Electronics Letters (Institution of Engineering & Technology)</searchLink>. 6/23/2005, Vol. 41 Issue 13, p739-741. 3p.
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  Data: <searchLink fieldCode="DE" term="%22Lasers%22">Lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Light+sources%22">Light sources</searchLink><br /><searchLink fieldCode="DE" term="%22Waveguides%22">Waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+currents%22">Electric currents</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+systems%22">Electronic systems</searchLink>
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  Data: The first continuous-wave InGaN multiple quantum well laser diodes grown by molecular beam epitaxy are reported. Ridge waveguide lasers are fabricated on free-standing GaN substrates and operated at room temperature under continuous-wave current injection. For 2.2 × 1000 μm lasers with highly reflective facet coatings a continuous-wave threshold current of 125 mA is obtained, corresponding to a threshold current density of 5.7 kA cm-2. The lasers have a thresh- old voltage of 8.6 V and lase at a wavelength of ∼ 405 nm for >3 min at 20° C. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1049/el:20051430
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      – SubjectFull: Waveguides
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              Text: 6/23/2005
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