Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering.
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| Title: | Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering. |
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| Authors: | Fan, Ching-Lin1,2 (AUTHOR) clfan@mail.ntust.edu.tw, Hsin, Tzu-Chun1 (AUTHOR), Yu, Xiang-Wei1 (AUTHOR), Lin, Zhe-Chen1 (AUTHOR) |
| Source: | Materials Science in Semiconductor Processing. Mar2024, Vol. 172, pN.PAG-N.PAG. 1p. |
| Subjects: | Passivation, Reactive sputtering, Indium gallium zinc oxide, Metal bonding, Radiofrequency sputtering, Threshold voltage, Thin film transistors |
| Abstract: | We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO:F/IZTO layers. The fluorine in IZTO:F film was in-situ doped through IZTO deposition using RF sputtering with CF 4 as the reactive gas. Furthermore, the electrical characteristics of the IZTO TFTs with varied IZTO:F/IZTO layer thickness ratios were investigated to optimize the IZTO:F thickness ratio in the channel. The TFTs with the optimal IZTO:F/IZTO layer thickness demonstrated significantly enhanced reliability under various stress conditions because the doped fluorine can occupy oxygen vacancies and provide stronger bonding with the metal ions in the active layer. Specifically, the TFT threshold voltage shift (ΔV th) with and without IZTO:F layers were 2.72 V and 5.77 V under positive bias stress (PBS), respectively, which is 2.12 times reduction. The ΔV th was also decreased from −2.23 V to −0.30 V under negative bias stress (NBS), which shows an improvement of 7.43 times. In addition, these devices also have enhanced reliability under negative bias illumination stress (NBIS). The fluorinated IZTO TFTs with the IZTO:F/IZTO layer exhibits enhanced reliability as a result of the defects passivation in the doped fluorine but also have a low manufacturing cost due to in-situ fluorine doping with no additional doping step. It is believed that fluorinated IZTO TFT with the enhanced device reliability will be a good candidate to support the requirements for the next-generation display backplanes. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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