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Rapid, one-step thermolysis synthesis of large-scaled molybdenum disulfide thin films with high mobility.

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Title: Rapid, one-step thermolysis synthesis of large-scaled molybdenum disulfide thin films with high mobility.
Authors: Wu, Tai-Yu1 (AUTHOR), Wang, Li-Wen1 (AUTHOR), Wang, Jia-Hao1 (AUTHOR), Chen, Bo-Chun1 (AUTHOR), Chu, Sheng-Yuan1 (AUTHOR) chusy@mail.ncku.edu.tw
Source: Ceramics International. Mar2024, Vol. 50 Issue 5, p7970-7977. 8p.
Subjects: Thin films, Thermolysis, Molybdenum sulfides, Charge carrier mobility, Molybdenum disulfide, Powders, Sulfur, Raman spectroscopy
Abstract: In this study, a simple and rapid method for the synthesis of molybdenum disulfide (MoS 2) through thermolysis was demonstrated. In the previous reported work, the thermolysis synthesis of MoS 2 usually required a two-step process. The process is time-consuming, and need high-temperature (900 °C). In this study, we synthesize large-area thin films quickly in a single step at 450 °C using both hydrogen gas and sulfur powders for synthesis and defect filling at the same time. The layer number of MoS 2 films, controlled by the precursor concentration, is determined to be between 3 and 10 layers via Raman spectroscopy and TEM analysis. XPS analysis revealed the optimal amount of sulfur powders for vacancy refilling, and films prepared with this amount exhibited high carrier mobility of up to 220 cm2/Vs. According to the author's knowledge, the carrier mobility of proposed samples is much higher than that of the reported data. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this study, a simple and rapid method for the synthesis of molybdenum disulfide (MoS 2) through thermolysis was demonstrated. In the previous reported work, the thermolysis synthesis of MoS 2 usually required a two-step process. The process is time-consuming, and need high-temperature (900 °C). In this study, we synthesize large-area thin films quickly in a single step at 450 °C using both hydrogen gas and sulfur powders for synthesis and defect filling at the same time. The layer number of MoS 2 films, controlled by the precursor concentration, is determined to be between 3 and 10 layers via Raman spectroscopy and TEM analysis. XPS analysis revealed the optimal amount of sulfur powders for vacancy refilling, and films prepared with this amount exhibited high carrier mobility of up to 220 cm2/Vs. According to the author's knowledge, the carrier mobility of proposed samples is much higher than that of the reported data. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2023.12.125