Bibliographic Details
| Title: |
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy |
| Authors: |
Hooper, S.E. stewart.hooper@sharp.co.uk, Kauer, M.1, Bousquet, V.1, Johnson, K.1, Zellweger, C.1, Heffernan, J.1 |
| Source: |
Journal of Crystal Growth. May2005, Vol. 278 Issue 1-4, p361-366. 6p. |
| Subjects: |
Diodes, Electroluminescent devices, Molecular dynamics, Molecular beam epitaxy |
| Abstract: |
Abstract: The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3.6 and 1000μm cavity length. Laser operation occurred at room temperature under pulsed current injection up to a 10% duty cycle. A typical best threshold current density of 7kAcm−2 and as operating voltage of 10V was achieved. Light emitting diodes were grown on silicon-doped GaN template substrates and fabricated into 1mm2 header mounted, non-encapsulated chips. At 20mA dc current operation, an output power of 3mW was measured. A peak power of 10mW was achieved at 90mA before thermal rollover occurred. The lasers and light emitting diodes emitted in the wavelength range 390–410nm. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
