InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
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| Title: | InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy |
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| Authors: | Hooper, S.E. stewart.hooper@sharp.co.uk, Kauer, M.1, Bousquet, V.1, Johnson, K.1, Zellweger, C.1, Heffernan, J.1 |
| Source: | Journal of Crystal Growth. May2005, Vol. 278 Issue 1-4, p361-366. 6p. |
| Subjects: | Diodes, Electroluminescent devices, Molecular dynamics, Molecular beam epitaxy |
| Abstract: | Abstract: The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3.6 and 1000μm cavity length. Laser operation occurred at room temperature under pulsed current injection up to a 10% duty cycle. A typical best threshold current density of 7kAcm−2 and as operating voltage of 10V was achieved. Light emitting diodes were grown on silicon-doped GaN template substrates and fabricated into 1mm2 header mounted, non-encapsulated chips. At 20mA dc current operation, an output power of 3mW was measured. A peak power of 10mW was achieved at 90mA before thermal rollover occurred. The lasers and light emitting diodes emitted in the wavelength range 390–410nm. [Copyright &y& Elsevier] |
| Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 17683590 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hooper%2C+S%2EE%2E%22">Hooper, S.E.</searchLink><i> stewart.hooper@sharp.co.uk</i><br /><searchLink fieldCode="AR" term="%22Kauer%2C+M%2E%22">Kauer, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bousquet%2C+V%2E%22">Bousquet, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Johnson%2C+K%2E%22">Johnson, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zellweger%2C+C%2E%22">Zellweger, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Heffernan%2C+J%2E%22">Heffernan, J.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. May2005, Vol. 278 Issue 1-4, p361-366. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Electroluminescent+devices%22">Electroluminescent devices</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3.6 and 1000μm cavity length. Laser operation occurred at room temperature under pulsed current injection up to a 10% duty cycle. A typical best threshold current density of 7kAcm−2 and as operating voltage of 10V was achieved. Light emitting diodes were grown on silicon-doped GaN template substrates and fabricated into 1mm2 header mounted, non-encapsulated chips. At 20mA dc current operation, an output power of 3mW was measured. A peak power of 10mW was achieved at 90mA before thermal rollover occurred. The lasers and light emitting diodes emitted in the wavelength range 390–410nm. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.jcrysgro.2004.12.049 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 361 Subjects: – SubjectFull: Diodes Type: general – SubjectFull: Electroluminescent devices Type: general – SubjectFull: Molecular dynamics Type: general – SubjectFull: Molecular beam epitaxy Type: general Titles: – TitleFull: InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hooper, S.E. – PersonEntity: Name: NameFull: Kauer, M. – PersonEntity: Name: NameFull: Bousquet, V. – PersonEntity: Name: NameFull: Johnson, K. – PersonEntity: Name: NameFull: Zellweger, C. – PersonEntity: Name: NameFull: Heffernan, J. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 00220248 Numbering: – Type: volume Value: 278 – Type: issue Value: 1-4 Titles: – TitleFull: Journal of Crystal Growth Type: main |
| ResultId | 1 |
