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Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.

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Title:	Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.
Authors:	Kang, Sueyeong¹ (AUTHOR), Petit, Matthieu¹ (AUTHOR) matthieu.petit@univ-amu.fr, Heresanu, Vasile¹ (AUTHOR), Altié, Alexandre¹ (AUTHOR), Beaujard, Thomas² (AUTHOR), Bon, Ganaël² (AUTHOR), Cespedes, Oscar³ (AUTHOR), Hickey, Brian³ (AUTHOR), Michez, Lisa¹ (AUTHOR)
Source:	Thin Solid Films. May2024, Vol. 797, pN.PAG-N.PAG. 1p.
Subjects:	Germanium films, Thin films, Epitaxy, Magnetic properties, Molecular beam epitaxy, Lattice constants
Abstract:	Structural and magnetic properties of Mn 5 (Si x Ge 1-x) 3 thin films were investigated. Ferromagnetic Mn 5 Ge 3 and anti-ferromagnetic Mn 5 Si 3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn 5 (Si x Ge 1-x) 3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μ B /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn 5 (Si x Ge 1-x) 3 compound. • Mn 5 (Si x Ge 1-x) 3 thin films are epitaxially grown on Ge(111) by molecular beam epitaxy. • Mn 5 (Si x Ge 1-x) 3 films with a Si concentration up to x = 0.6 are synthesized. • Si concentration and the structural and magnetic properties are correlated. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Structural and magnetic properties of Mn 5 (Si x Ge 1-x) 3 thin films were investigated. Ferromagnetic Mn 5 Ge 3 and anti-ferromagnetic Mn 5 Si 3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn 5 (Si x Ge 1-x) 3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μ B /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn 5 (Si x Ge 1-x) 3 compound. • Mn 5 (Si x Ge 1-x) 3 thin films are epitaxially grown on Ge(111) by molecular beam epitaxy. • Mn 5 (Si x Ge 1-x) 3 films with a Si concentration up to x = 0.6 are synthesized. • Si concentration and the structural and magnetic properties are correlated. [ABSTRACT FROM AUTHOR]
ISSN:	00406090
DOI:	10.1016/j.tsf.2024.140338