Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.

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Title: Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.
Authors: Kang, Sueyeong1 (AUTHOR), Petit, Matthieu1 (AUTHOR) matthieu.petit@univ-amu.fr, Heresanu, Vasile1 (AUTHOR), Altié, Alexandre1 (AUTHOR), Beaujard, Thomas2 (AUTHOR), Bon, Ganaël2 (AUTHOR), Cespedes, Oscar3 (AUTHOR), Hickey, Brian3 (AUTHOR), Michez, Lisa1 (AUTHOR)
Source: Thin Solid Films. May2024, Vol. 797, pN.PAG-N.PAG. 1p.
Subjects: Germanium films, Thin films, Epitaxy, Magnetic properties, Molecular beam epitaxy, Lattice constants
Abstract: Structural and magnetic properties of Mn 5 (Si x Ge 1-x) 3 thin films were investigated. Ferromagnetic Mn 5 Ge 3 and anti-ferromagnetic Mn 5 Si 3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn 5 (Si x Ge 1-x) 3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μ B /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn 5 (Si x Ge 1-x) 3 compound. • Mn 5 (Si x Ge 1-x) 3 thin films are epitaxially grown on Ge(111) by molecular beam epitaxy. • Mn 5 (Si x Ge 1-x) 3 films with a Si concentration up to x = 0.6 are synthesized. • Si concentration and the structural and magnetic properties are correlated. [ABSTRACT FROM AUTHOR]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 177198616
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  Data: Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. May2024, Vol. 797, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Germanium+films%22">Germanium films</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+properties%22">Magnetic properties</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Lattice+constants%22">Lattice constants</searchLink>
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  Label: Abstract
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  Data: Structural and magnetic properties of Mn 5 (Si x Ge 1-x) 3 thin films were investigated. Ferromagnetic Mn 5 Ge 3 and anti-ferromagnetic Mn 5 Si 3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn 5 (Si x Ge 1-x) 3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μ B /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn 5 (Si x Ge 1-x) 3 compound. • Mn 5 (Si x Ge 1-x) 3 thin films are epitaxially grown on Ge(111) by molecular beam epitaxy. • Mn 5 (Si x Ge 1-x) 3 films with a Si concentration up to x = 0.6 are synthesized. • Si concentration and the structural and magnetic properties are correlated. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.tsf.2024.140338
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      – Code: eng
        Text: English
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        PageCount: 1
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      – SubjectFull: Epitaxy
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      – SubjectFull: Magnetic properties
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      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Lattice constants
        Type: general
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      – TitleFull: Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films.
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            – D: 30
              M: 05
              Text: May2024
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