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Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers.

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Title: Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers.
Authors: Zhang, Meng1,2 (AUTHOR) zhangmeng223@mails.ucas.ac.cn, Zhang, Tianyi1,3 (AUTHOR) 18943085572@163.com, Tang, Hui1,2 (AUTHOR) tanghui21@mails.ucas.ac.cn, Liang, Lei1,2,3 (AUTHOR) liangl@ciomp.ac.cn, Chen, Yongyi1,3,4 (AUTHOR) liangl@ciomp.ac.cn, Qin, Li1,2,3 (AUTHOR) leiyuxin@ciomp.ac.cn, Song, Yue1,2,3 (AUTHOR) jiapeng@ciomp.ac.cn, Lei, Yuxin1,2,3 (AUTHOR) wangyubing@ciomp.ac.cn, Jia, Peng1,2,3 (AUTHOR) qiucheng@ciomp.ac.cn, Wang, Yubing1,2,3 (AUTHOR) ningyq@ciomp.ac.cn, Qiu, Cheng1,2,3 (AUTHOR) wanglj@ciomp.ac.cn, Cao, Yuntao5 (AUTHOR) caoyuntao@faw.com.cn, Ning, Yongqiang1,2 (AUTHOR), Wang, Lijun1,2,3 (AUTHOR)
Source: Nanomaterials (2079-4991). Jun2024, Vol. 14 Issue 11, p969. 23p.
Subjects: Semiconductor optical amplifiers, Optical polarization, Potential barrier, Quantum wells, Forward error correction
Abstract: Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers.
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Zhang%2C+Meng%22&quot;&gt;Zhang, Meng&lt;/searchLink&gt;&lt;relatesTo&gt;1,2&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; zhangmeng223@mails.ucas.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Zhang%2C+Tianyi%22&quot;&gt;Zhang, Tianyi&lt;/searchLink&gt;&lt;relatesTo&gt;1,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; 18943085572@163.com&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Tang%2C+Hui%22&quot;&gt;Tang, Hui&lt;/searchLink&gt;&lt;relatesTo&gt;1,2&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; tanghui21@mails.ucas.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Liang%2C+Lei%22&quot;&gt;Liang, Lei&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; liangl@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Chen%2C+Yongyi%22&quot;&gt;Chen, Yongyi&lt;/searchLink&gt;&lt;relatesTo&gt;1,3,4&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; liangl@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Qin%2C+Li%22&quot;&gt;Qin, Li&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; leiyuxin@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Song%2C+Yue%22&quot;&gt;Song, Yue&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; jiapeng@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Lei%2C+Yuxin%22&quot;&gt;Lei, Yuxin&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; wangyubing@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Jia%2C+Peng%22&quot;&gt;Jia, Peng&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; qiucheng@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Wang%2C+Yubing%22&quot;&gt;Wang, Yubing&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; ningyq@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Qiu%2C+Cheng%22&quot;&gt;Qiu, Cheng&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; wanglj@ciomp.ac.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Cao%2C+Yuntao%22&quot;&gt;Cao, Yuntao&lt;/searchLink&gt;&lt;relatesTo&gt;5&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; caoyuntao@faw.com.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Ning%2C+Yongqiang%22&quot;&gt;Ning, Yongqiang&lt;/searchLink&gt;&lt;relatesTo&gt;1,2&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Wang%2C+Lijun%22&quot;&gt;Wang, Lijun&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Nanomaterials+%282079-4991%29%22&quot;&gt;Nanomaterials (2079-4991)&lt;/searchLink&gt;. Jun2024, Vol. 14 Issue 11, p969. 23p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Semiconductor+optical+amplifiers%22&quot;&gt;Semiconductor optical amplifiers&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Optical+polarization%22&quot;&gt;Optical polarization&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Potential+barrier%22&quot;&gt;Potential barrier&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Quantum+wells%22&quot;&gt;Quantum wells&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Forward+error+correction%22&quot;&gt;Forward error correction&lt;/searchLink&gt;
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 &#181;m, 5 &#181;m, and 6 &#181;m is investigated. A 3 dB gain bandwidth of &gt;140 nm is achieved with a 4 &#181;m ridge width, whereas a 6 &#181;m ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is &lt;3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: &lt;i&gt;Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano14110969
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        Text: English
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        PageCount: 23
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      – SubjectFull: Semiconductor optical amplifiers
        Type: general
      – SubjectFull: Optical polarization
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      – SubjectFull: Potential barrier
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      – SubjectFull: Quantum wells
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      – SubjectFull: Forward error correction
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            – D: 01
              M: 06
              Text: Jun2024
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