Synthesis and characterization of rare earth ion doped YVO4 thin film phosphors grown by PLD.
Saved in:
| Title: | Synthesis and characterization of rare earth ion doped YVO |
|---|---|
| Authors: | Sharma, Suruchi1 (AUTHOR), Khanna, Atul1 (AUTHOR) atul.phy@gndu.ac.in, Kumar, Rinku2 (AUTHOR), Chandra, Ramesh2 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Jun2024, Vol. 35 Issue 18, p1-16. 16p. |
| Subjects: | Rare earth ions, Thin films, Rare earth oxides, Field emission electron microscopy, Pulsed laser deposition, Band gaps, Phosphors |
| Abstract: | Pulsed laser deposition (PLD) technique was used to grow undoped, Eu-doped, and Sm, Dy, and Er-co-doped YVO4 thin-film phosphor samples on silica substrates at in situ substrate temperature of 650 °C. The thin films were characterized by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray, Raman, UV–visible, and photoluminescence (PL) spectroscopic analysis. GIXRD studies confirmed the formation of crystalline tetragonal phase of YVO4 with unit cell parameters: a = b = 7.10 Å and c = 6.27 Å. FESEM studies showed uniform and dense surface morphology of the samples. The thickness of undoped, Eu-doped, and co-doped films was 164, 434, and 217 nm, respectively, and the average particle size was 112, 122, and 127 nm, respectively. The crystallite size was in range of 31–48 nm. Energy-dispersive X-ray elemental mapping scans confirmed the uniform distribution of rare earth ions on the surface without any agglomeration effects in highly stoichiometric YVO4 films. The optical band gap energy of the thin-film samples was found to lie in the range of 4.6–4.9 eV and PL studies found strong blue, red, and white light emission from undoped, Eu-doped, and co-doped YVO4 thin-film samples, respectively, due to an effective energy transfer from the vanadate group to the dopant rare earth ions. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | Pulsed laser deposition (PLD) technique was used to grow undoped, Eu-doped, and Sm, Dy, and Er-co-doped YVO4 thin-film phosphor samples on silica substrates at in situ substrate temperature of 650 °C. The thin films were characterized by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray, Raman, UV–visible, and photoluminescence (PL) spectroscopic analysis. GIXRD studies confirmed the formation of crystalline tetragonal phase of YVO4 with unit cell parameters: a = b = 7.10 Å and c = 6.27 Å. FESEM studies showed uniform and dense surface morphology of the samples. The thickness of undoped, Eu-doped, and co-doped films was 164, 434, and 217 nm, respectively, and the average particle size was 112, 122, and 127 nm, respectively. The crystallite size was in range of 31–48 nm. Energy-dispersive X-ray elemental mapping scans confirmed the uniform distribution of rare earth ions on the surface without any agglomeration effects in highly stoichiometric YVO4 films. The optical band gap energy of the thin-film samples was found to lie in the range of 4.6–4.9 eV and PL studies found strong blue, red, and white light emission from undoped, Eu-doped, and co-doped YVO4 thin-film samples, respectively, due to an effective energy transfer from the vanadate group to the dopant rare earth ions. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-024-12979-6 |
