Synthesis and characterization of rare earth ion doped YVO4 thin film phosphors grown by PLD.
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| Title: | Synthesis and characterization of rare earth ion doped YVO |
|---|---|
| Authors: | Sharma, Suruchi1 (AUTHOR), Khanna, Atul1 (AUTHOR) atul.phy@gndu.ac.in, Kumar, Rinku2 (AUTHOR), Chandra, Ramesh2 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Jun2024, Vol. 35 Issue 18, p1-16. 16p. |
| Subjects: | Rare earth ions, Thin films, Rare earth oxides, Field emission electron microscopy, Pulsed laser deposition, Band gaps, Phosphors |
| Abstract: | Pulsed laser deposition (PLD) technique was used to grow undoped, Eu-doped, and Sm, Dy, and Er-co-doped YVO4 thin-film phosphor samples on silica substrates at in situ substrate temperature of 650 °C. The thin films were characterized by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray, Raman, UV–visible, and photoluminescence (PL) spectroscopic analysis. GIXRD studies confirmed the formation of crystalline tetragonal phase of YVO4 with unit cell parameters: a = b = 7.10 Å and c = 6.27 Å. FESEM studies showed uniform and dense surface morphology of the samples. The thickness of undoped, Eu-doped, and co-doped films was 164, 434, and 217 nm, respectively, and the average particle size was 112, 122, and 127 nm, respectively. The crystallite size was in range of 31–48 nm. Energy-dispersive X-ray elemental mapping scans confirmed the uniform distribution of rare earth ions on the surface without any agglomeration effects in highly stoichiometric YVO4 films. The optical band gap energy of the thin-film samples was found to lie in the range of 4.6–4.9 eV and PL studies found strong blue, red, and white light emission from undoped, Eu-doped, and co-doped YVO4 thin-film samples, respectively, due to an effective energy transfer from the vanadate group to the dopant rare earth ions. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 178029404 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Synthesis and characterization of rare earth ion doped YVO<subscript>4</subscript> thin film phosphors grown by PLD. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Sharma%2C+Suruchi%22">Sharma, Suruchi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Khanna%2C+Atul%22">Khanna, Atul</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> atul.phy@gndu.ac.in</i><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Rinku%22">Kumar, Rinku</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chandra%2C+Ramesh%22">Chandra, Ramesh</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2024, Vol. 35 Issue 18, p1-16. 16p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Rare+earth+ions%22">Rare earth ions</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Rare+earth+oxides%22">Rare earth oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Field+emission+electron+microscopy%22">Field emission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Pulsed+laser+deposition%22">Pulsed laser deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphors%22">Phosphors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Pulsed laser deposition (PLD) technique was used to grow undoped, Eu-doped, and Sm, Dy, and Er-co-doped YVO4 thin-film phosphor samples on silica substrates at in situ substrate temperature of 650 °C. The thin films were characterized by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray, Raman, UV–visible, and photoluminescence (PL) spectroscopic analysis. GIXRD studies confirmed the formation of crystalline tetragonal phase of YVO4 with unit cell parameters: a = b = 7.10 Å and c = 6.27 Å. FESEM studies showed uniform and dense surface morphology of the samples. The thickness of undoped, Eu-doped, and co-doped films was 164, 434, and 217 nm, respectively, and the average particle size was 112, 122, and 127 nm, respectively. The crystallite size was in range of 31–48 nm. Energy-dispersive X-ray elemental mapping scans confirmed the uniform distribution of rare earth ions on the surface without any agglomeration effects in highly stoichiometric YVO4 films. The optical band gap energy of the thin-film samples was found to lie in the range of 4.6–4.9 eV and PL studies found strong blue, red, and white light emission from undoped, Eu-doped, and co-doped YVO4 thin-film samples, respectively, due to an effective energy transfer from the vanadate group to the dopant rare earth ions. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-024-12979-6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 16 StartPage: 1 Subjects: – SubjectFull: Rare earth ions Type: general – SubjectFull: Thin films Type: general – SubjectFull: Rare earth oxides Type: general – SubjectFull: Field emission electron microscopy Type: general – SubjectFull: Pulsed laser deposition Type: general – SubjectFull: Band gaps Type: general – SubjectFull: Phosphors Type: general Titles: – TitleFull: Synthesis and characterization of rare earth ion doped YVO4 thin film phosphors grown by PLD. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sharma, Suruchi – PersonEntity: Name: NameFull: Khanna, Atul – PersonEntity: Name: NameFull: Kumar, Rinku – PersonEntity: Name: NameFull: Chandra, Ramesh IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 06 Text: Jun2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 35 – Type: issue Value: 18 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
