Bibliographic Details
| Title: |
Evaluation and simulation of high voltage-CMOS chips for high radiation environments. |
| Authors: |
Wade, Benjamin1 (AUTHOR) bwade@hep.ph.liv.ac.uk, Hammerich, Jan1 (AUTHOR), Powell, Samuel1 (AUTHOR), Vilella, Eva1 (AUTHOR), Zhang, Chenfan1 (AUTHOR) |
| Source: |
Nuclear Instruments & Methods in Physics Research Section A. Sep2024, Vol. 1066, pN.PAG-N.PAG. 1p. |
| Subjects: |
Metal oxide semiconductors, Breakdown voltage, Radiation tolerance, Substrates (Materials science), Radiation |
| Abstract: |
Soon to be delivered, the UKRI-MPW1 is a new High Voltage-Complimentary Metal Oxide Semiconductor (HV-CMOS) prototype chip designed to increase the radiation tolerance of the technology to meet the demands of future experiments. The design seeks to do this through backside biasing and increased breakdown voltage (V b d) (a predicted 1000 V according to simulation). The chip, designed in the LFoundry 150 nm node, has a 3.0 kΩ cm high resistivity p-type substrate, a Voltage Terminating ring Scheme (VTS), and a new novel low dose p-shield layer, jointly designed with LFoundry. Presented here are the TCAD simulations used to optimise the design of the new layer for an unirradiated sensor. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
