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Evaluation and simulation of high voltage-CMOS chips for high radiation environments.

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Title: Evaluation and simulation of high voltage-CMOS chips for high radiation environments.
Authors: Wade, Benjamin1 (AUTHOR) bwade@hep.ph.liv.ac.uk, Hammerich, Jan1 (AUTHOR), Powell, Samuel1 (AUTHOR), Vilella, Eva1 (AUTHOR), Zhang, Chenfan1 (AUTHOR)
Source: Nuclear Instruments & Methods in Physics Research Section A. Sep2024, Vol. 1066, pN.PAG-N.PAG. 1p.
Subjects: Metal oxide semiconductors, Breakdown voltage, Radiation tolerance, Substrates (Materials science), Radiation
Abstract: Soon to be delivered, the UKRI-MPW1 is a new High Voltage-Complimentary Metal Oxide Semiconductor (HV-CMOS) prototype chip designed to increase the radiation tolerance of the technology to meet the demands of future experiments. The design seeks to do this through backside biasing and increased breakdown voltage (V b d) (a predicted 1000 V according to simulation). The chip, designed in the LFoundry 150 nm node, has a 3.0 kΩ cm high resistivity p-type substrate, a Voltage Terminating ring Scheme (VTS), and a new novel low dose p-shield layer, jointly designed with LFoundry. Presented here are the TCAD simulations used to optimise the design of the new layer for an unirradiated sensor. [ABSTRACT FROM AUTHOR]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 178938371
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Evaluation and simulation of high voltage-CMOS chips for high radiation environments.
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  Data: <searchLink fieldCode="AR" term="%22Wade%2C+Benjamin%22">Wade, Benjamin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> bwade@hep.ph.liv.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Hammerich%2C+Jan%22">Hammerich, Jan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Powell%2C+Samuel%22">Powell, Samuel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vilella%2C+Eva%22">Vilella, Eva</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Chenfan%22">Zhang, Chenfan</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Sep2024, Vol. 1066, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Breakdown+voltage%22">Breakdown voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation+tolerance%22">Radiation tolerance</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation%22">Radiation</searchLink>
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  Label: Abstract
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  Data: Soon to be delivered, the UKRI-MPW1 is a new High Voltage-Complimentary Metal Oxide Semiconductor (HV-CMOS) prototype chip designed to increase the radiation tolerance of the technology to meet the demands of future experiments. The design seeks to do this through backside biasing and increased breakdown voltage (V b d) (a predicted 1000 V according to simulation). The chip, designed in the LFoundry 150 nm node, has a 3.0 kΩ cm high resistivity p-type substrate, a Voltage Terminating ring Scheme (VTS), and a new novel low dose p-shield layer, jointly designed with LFoundry. Presented here are the TCAD simulations used to optimise the design of the new layer for an unirradiated sensor. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=178938371
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      – Type: doi
        Value: 10.1016/j.nima.2024.169630
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Breakdown voltage
        Type: general
      – SubjectFull: Radiation tolerance
        Type: general
      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Radiation
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            – D: 01
              M: 09
              Text: Sep2024
              Type: published
              Y: 2024
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