Fabrication and exploring the structural and optical features of Si3N4/SiO2 hybrid nanomaterials doped PMMA for promising optoelectronics fields.
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| Title: | Fabrication and exploring the structural and optical features of Si |
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| Authors: | Ahmed, Ghaith1 (AUTHOR), Kadhim, Arshad Fadhil2 (AUTHOR), Hashim, Ahmed3 (AUTHOR) ahmed_taay@yahoo.com, Ibrahim, Hamed4 (AUTHOR) |
| Source: | Optical & Quantum Electronics. Aug2024, Vol. 56 Issue 8, p1-16. 16p. |
| Subjects: | Optical materials, Optical conductivity, Optical properties, Permittivity, Absorption coefficients, Optical constants |
| Abstract: | This work aims to enhance the optical and structure characteristics of silicon nitride (Si3N4)/silica (SiO2)/poly-methyl methacrylate (PMMA). The films of (PMMA–SiO2–Si3N4) were fabricated using casting method. The structure and optical characteristics of Si3N4/SiO2/PMMA nanostructures were studied, the structure characteristics of PMMA/SiO2/Si3N4 nanostructures included: FTIR and optical microscope. The optical properties were investigated at wavelength (λ = 240–740 nm). The results confirmed the absorption increased of 61.5% and transmission reduced of 42.2% when the Si3N4 and SiO2 NPs content reached 6.9 wt%, these results make them as a superior materials for many optical fields. The energy gap of PMMA reduced from 4.25 to 3.09 eV when the Si3N4 and SiO2 NPs content reached 6.9 wt%, this behavior made the Si3N4/SiO2/PMMA nanostructures suitable for optoelectronics nanodevices. The optical constants, the absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, as well as optical conductivity increases with increasing in the concentrations of Si3N4 and SiO2 NPs. The results confirmed that the PMMA/SiO2/Si3N4 nanomaterials can be considered as future nanosystems to exploit in a variety of promising nanoelectronics and optics applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | This work aims to enhance the optical and structure characteristics of silicon nitride (Si3N4)/silica (SiO2)/poly-methyl methacrylate (PMMA). The films of (PMMA–SiO2–Si3N4) were fabricated using casting method. The structure and optical characteristics of Si3N4/SiO2/PMMA nanostructures were studied, the structure characteristics of PMMA/SiO2/Si3N4 nanostructures included: FTIR and optical microscope. The optical properties were investigated at wavelength (λ = 240–740 nm). The results confirmed the absorption increased of 61.5% and transmission reduced of 42.2% when the Si3N4 and SiO2 NPs content reached 6.9 wt%, these results make them as a superior materials for many optical fields. The energy gap of PMMA reduced from 4.25 to 3.09 eV when the Si3N4 and SiO2 NPs content reached 6.9 wt%, this behavior made the Si3N4/SiO2/PMMA nanostructures suitable for optoelectronics nanodevices. The optical constants, the absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, as well as optical conductivity increases with increasing in the concentrations of Si3N4 and SiO2 NPs. The results confirmed that the PMMA/SiO2/Si3N4 nanomaterials can be considered as future nanosystems to exploit in a variety of promising nanoelectronics and optics applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 03068919 |
| DOI: | 10.1007/s11082-024-07217-6 |
