Fabrication and exploring the structural and optical features of Si3N4/SiO2 hybrid nanomaterials doped PMMA for promising optoelectronics fields.
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| Title: | Fabrication and exploring the structural and optical features of Si |
|---|---|
| Authors: | Ahmed, Ghaith1 (AUTHOR), Kadhim, Arshad Fadhil2 (AUTHOR), Hashim, Ahmed3 (AUTHOR) ahmed_taay@yahoo.com, Ibrahim, Hamed4 (AUTHOR) |
| Source: | Optical & Quantum Electronics. Aug2024, Vol. 56 Issue 8, p1-16. 16p. |
| Subjects: | Optical materials, Optical conductivity, Optical properties, Permittivity, Absorption coefficients, Optical constants |
| Abstract: | This work aims to enhance the optical and structure characteristics of silicon nitride (Si3N4)/silica (SiO2)/poly-methyl methacrylate (PMMA). The films of (PMMA–SiO2–Si3N4) were fabricated using casting method. The structure and optical characteristics of Si3N4/SiO2/PMMA nanostructures were studied, the structure characteristics of PMMA/SiO2/Si3N4 nanostructures included: FTIR and optical microscope. The optical properties were investigated at wavelength (λ = 240–740 nm). The results confirmed the absorption increased of 61.5% and transmission reduced of 42.2% when the Si3N4 and SiO2 NPs content reached 6.9 wt%, these results make them as a superior materials for many optical fields. The energy gap of PMMA reduced from 4.25 to 3.09 eV when the Si3N4 and SiO2 NPs content reached 6.9 wt%, this behavior made the Si3N4/SiO2/PMMA nanostructures suitable for optoelectronics nanodevices. The optical constants, the absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, as well as optical conductivity increases with increasing in the concentrations of Si3N4 and SiO2 NPs. The results confirmed that the PMMA/SiO2/Si3N4 nanomaterials can be considered as future nanosystems to exploit in a variety of promising nanoelectronics and optics applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 179067255 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Fabrication and exploring the structural and optical features of Si<subscript>3</subscript>N<subscript>4</subscript>/SiO<subscript>2</subscript> hybrid nanomaterials doped PMMA for promising optoelectronics fields. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ahmed%2C+Ghaith%22">Ahmed, Ghaith</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kadhim%2C+Arshad+Fadhil%22">Kadhim, Arshad Fadhil</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hashim%2C+Ahmed%22">Hashim, Ahmed</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> ahmed_taay@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Ibrahim%2C+Hamed%22">Ibrahim, Hamed</searchLink><relatesTo>4</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optical+%26+Quantum+Electronics%22">Optical & Quantum Electronics</searchLink>. Aug2024, Vol. 56 Issue 8, p1-16. 16p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Optical+materials%22">Optical materials</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+conductivity%22">Optical conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption+coefficients%22">Absorption coefficients</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+constants%22">Optical constants</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This work aims to enhance the optical and structure characteristics of silicon nitride (Si3N4)/silica (SiO2)/poly-methyl methacrylate (PMMA). The films of (PMMA–SiO2–Si3N4) were fabricated using casting method. The structure and optical characteristics of Si3N4/SiO2/PMMA nanostructures were studied, the structure characteristics of PMMA/SiO2/Si3N4 nanostructures included: FTIR and optical microscope. The optical properties were investigated at wavelength (λ = 240–740 nm). The results confirmed the absorption increased of 61.5% and transmission reduced of 42.2% when the Si3N4 and SiO2 NPs content reached 6.9 wt%, these results make them as a superior materials for many optical fields. The energy gap of PMMA reduced from 4.25 to 3.09 eV when the Si3N4 and SiO2 NPs content reached 6.9 wt%, this behavior made the Si3N4/SiO2/PMMA nanostructures suitable for optoelectronics nanodevices. The optical constants, the absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, as well as optical conductivity increases with increasing in the concentrations of Si3N4 and SiO2 NPs. The results confirmed that the PMMA/SiO2/Si3N4 nanomaterials can be considered as future nanosystems to exploit in a variety of promising nanoelectronics and optics applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11082-024-07217-6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 16 StartPage: 1 Subjects: – SubjectFull: Optical materials Type: general – SubjectFull: Optical conductivity Type: general – SubjectFull: Optical properties Type: general – SubjectFull: Permittivity Type: general – SubjectFull: Absorption coefficients Type: general – SubjectFull: Optical constants Type: general Titles: – TitleFull: Fabrication and exploring the structural and optical features of Si3N4/SiO2 hybrid nanomaterials doped PMMA for promising optoelectronics fields. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ahmed, Ghaith – PersonEntity: Name: NameFull: Kadhim, Arshad Fadhil – PersonEntity: Name: NameFull: Hashim, Ahmed – PersonEntity: Name: NameFull: Ibrahim, Hamed IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 03068919 Numbering: – Type: volume Value: 56 – Type: issue Value: 8 Titles: – TitleFull: Optical & Quantum Electronics Type: main |
| ResultId | 1 |
