Photothermal interactions in a semiconducting rotating plate with voids and temperature-dependent properties under dual phase lag model.
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| Title: | Photothermal interactions in a semiconducting rotating plate with voids and temperature-dependent properties under dual phase lag model. |
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| Authors: | Boora, Kirti1 (AUTHOR), Deswal, Sunita1 (AUTHOR), Poonia, Ravinder2 (AUTHOR) ravinderpoonia0.3@gmail.com |
| Source: | Acta Mechanica. Nov2024, Vol. 235 Issue 11, p6889-6910. 22p. |
| Subjects: | Carrier density, Surface plates, Rotational motion, Silicon |
| Abstract: | The current manuscript focuses on the photo-thermoelastic interactions in a rotating plate with a porous structure and temperature-dependent properties. The analysis is performed using the dual phase lag theory and by considering a two-dimensional isotropic homogeneous plate. The upper surface of the plate experiences the application of a mechanical source, while the lower surface of the plate is insulated thermally. The application of the normal mode technique enables the derivation of analytical expressions for various field variables such as displacement, stress, change in volume fraction field, carrier density and temperature within the physical domain. Numerical computations are performed for a plate composed of silicon material and the results are represented graphically with the support of MATLAB software to demonstrate the consistency of the obtained results. To outline the influences of rotation, photothermal transport process, temperature-dependent properties and void parameters on the physical fields, certain collations are presented. Some specific cases of interest have also been deducted. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The current manuscript focuses on the photo-thermoelastic interactions in a rotating plate with a porous structure and temperature-dependent properties. The analysis is performed using the dual phase lag theory and by considering a two-dimensional isotropic homogeneous plate. The upper surface of the plate experiences the application of a mechanical source, while the lower surface of the plate is insulated thermally. The application of the normal mode technique enables the derivation of analytical expressions for various field variables such as displacement, stress, change in volume fraction field, carrier density and temperature within the physical domain. Numerical computations are performed for a plate composed of silicon material and the results are represented graphically with the support of MATLAB software to demonstrate the consistency of the obtained results. To outline the influences of rotation, photothermal transport process, temperature-dependent properties and void parameters on the physical fields, certain collations are presented. Some specific cases of interest have also been deducted. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 00015970 |
| DOI: | 10.1007/s00707-024-04080-0 |
