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SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.

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Title: SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.
Authors: Mathew Philip, Neju1 (AUTHOR), Amiruddin, R.2 (AUTHOR), Santhosh Kumar, M.C.1 (AUTHOR) santhoshmc@nitt.edu
Source: Materials Letters. Dec2024, Vol. 377, pN.PAG-N.PAG. 1p.
Subjects: Schottky barrier diodes, Energy dispersive X-ray spectroscopy, Schottky barrier, Thin films, Thin film deposition
Abstract: [Display omitted] • Deposition of SnS thin film over flexible SS304 substrate through co-evaporation. • Realization of asymmetric resistive switching characteristics of SS/SnS/Ag diode. • Fabricated ReRAM diode reduces the sneak path current in memory crossbar array. • ReRAM with On/Off Ratio of 63 at 0.5 V with high endurance is obtained. • SnS based flexible memristor is reported for the first time. The present research reports tin-mono-sulphide (SnS) based Schottky diodes with asymmetric resistive switching characteristics. The SnS thin films are deposited over flexible stainless steel (SS 304) substrates through the co-evaporation method at 573 K. Structural analysis confirms the formation of orthorhombic SnS with a preferential orientation along the (111) plane. Morphological analysis reveals the distribution of uniform grains of SnS with flake-like morphology. Energy dispersive X-ray spectroscopy (EDS) analysis confirms the formation of sulfur-rich SnS thin films. The resistive switching analysis of the SnS/Ag Schottky barrier showed asymmetric current–voltage characteristics with an On/Off ratio of 63 at 0.5 V. The resistive switching mechanism in the fabricated devices is attributed to the formation and rupture of Ag x S y conductive filaments at the SnS/Ag interface. This self-rectifying and asymmetric resistive switching behaviour is proposed to mitigate the issue of sneak path current in conventional memristor crossbar arrays. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:[Display omitted] • Deposition of SnS thin film over flexible SS304 substrate through co-evaporation. • Realization of asymmetric resistive switching characteristics of SS/SnS/Ag diode. • Fabricated ReRAM diode reduces the sneak path current in memory crossbar array. • ReRAM with On/Off Ratio of 63 at 0.5 V with high endurance is obtained. • SnS based flexible memristor is reported for the first time. The present research reports tin-mono-sulphide (SnS) based Schottky diodes with asymmetric resistive switching characteristics. The SnS thin films are deposited over flexible stainless steel (SS 304) substrates through the co-evaporation method at 573 K. Structural analysis confirms the formation of orthorhombic SnS with a preferential orientation along the (111) plane. Morphological analysis reveals the distribution of uniform grains of SnS with flake-like morphology. Energy dispersive X-ray spectroscopy (EDS) analysis confirms the formation of sulfur-rich SnS thin films. The resistive switching analysis of the SnS/Ag Schottky barrier showed asymmetric current–voltage characteristics with an On/Off ratio of 63 at 0.5 V. The resistive switching mechanism in the fabricated devices is attributed to the formation and rupture of Ag x S y conductive filaments at the SnS/Ag interface. This self-rectifying and asymmetric resistive switching behaviour is proposed to mitigate the issue of sneak path current in conventional memristor crossbar arrays. [ABSTRACT FROM AUTHOR]
ISSN:0167577X
DOI:10.1016/j.matlet.2024.137358