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SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.

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Title: SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.
Authors: Mathew Philip, Neju1 (AUTHOR), Amiruddin, R.2 (AUTHOR), Santhosh Kumar, M.C.1 (AUTHOR) santhoshmc@nitt.edu
Source: Materials Letters. Dec2024, Vol. 377, pN.PAG-N.PAG. 1p.
Subjects: Schottky barrier diodes, Energy dispersive X-ray spectroscopy, Schottky barrier, Thin films, Thin film deposition
Abstract: [Display omitted] • Deposition of SnS thin film over flexible SS304 substrate through co-evaporation. • Realization of asymmetric resistive switching characteristics of SS/SnS/Ag diode. • Fabricated ReRAM diode reduces the sneak path current in memory crossbar array. • ReRAM with On/Off Ratio of 63 at 0.5 V with high endurance is obtained. • SnS based flexible memristor is reported for the first time. The present research reports tin-mono-sulphide (SnS) based Schottky diodes with asymmetric resistive switching characteristics. The SnS thin films are deposited over flexible stainless steel (SS 304) substrates through the co-evaporation method at 573 K. Structural analysis confirms the formation of orthorhombic SnS with a preferential orientation along the (111) plane. Morphological analysis reveals the distribution of uniform grains of SnS with flake-like morphology. Energy dispersive X-ray spectroscopy (EDS) analysis confirms the formation of sulfur-rich SnS thin films. The resistive switching analysis of the SnS/Ag Schottky barrier showed asymmetric current–voltage characteristics with an On/Off ratio of 63 at 0.5 V. The resistive switching mechanism in the fabricated devices is attributed to the formation and rupture of Ag x S y conductive filaments at the SnS/Ag interface. This self-rectifying and asymmetric resistive switching behaviour is proposed to mitigate the issue of sneak path current in conventional memristor crossbar arrays. [ABSTRACT FROM AUTHOR]
Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 180492946
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  Data: SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.
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  Data: <searchLink fieldCode="AR" term="%22Mathew+Philip%2C+Neju%22">Mathew Philip, Neju</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Santhosh+Kumar%2C+M%2EC%2E%22">Santhosh Kumar, M.C.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> santhoshmc@nitt.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Letters%22">Materials Letters</searchLink>. Dec2024, Vol. 377, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+dispersive+X-ray+spectroscopy%22">Energy dispersive X-ray spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+deposition%22">Thin film deposition</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: [Display omitted] • Deposition of SnS thin film over flexible SS304 substrate through co-evaporation. • Realization of asymmetric resistive switching characteristics of SS/SnS/Ag diode. • Fabricated ReRAM diode reduces the sneak path current in memory crossbar array. • ReRAM with On/Off Ratio of 63 at 0.5 V with high endurance is obtained. • SnS based flexible memristor is reported for the first time. The present research reports tin-mono-sulphide (SnS) based Schottky diodes with asymmetric resistive switching characteristics. The SnS thin films are deposited over flexible stainless steel (SS 304) substrates through the co-evaporation method at 573 K. Structural analysis confirms the formation of orthorhombic SnS with a preferential orientation along the (111) plane. Morphological analysis reveals the distribution of uniform grains of SnS with flake-like morphology. Energy dispersive X-ray spectroscopy (EDS) analysis confirms the formation of sulfur-rich SnS thin films. The resistive switching analysis of the SnS/Ag Schottky barrier showed asymmetric current–voltage characteristics with an On/Off ratio of 63 at 0.5 V. The resistive switching mechanism in the fabricated devices is attributed to the formation and rupture of Ag x S y conductive filaments at the SnS/Ag interface. This self-rectifying and asymmetric resistive switching behaviour is proposed to mitigate the issue of sneak path current in conventional memristor crossbar arrays. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.matlet.2024.137358
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Schottky barrier diodes
        Type: general
      – SubjectFull: Energy dispersive X-ray spectroscopy
        Type: general
      – SubjectFull: Schottky barrier
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Thin film deposition
        Type: general
    Titles:
      – TitleFull: SnS based flexible Schottky barriers with asymmetric resistive switching characteristics.
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            NameFull: Mathew Philip, Neju
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            NameFull: Amiruddin, R.
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            NameFull: Santhosh Kumar, M.C.
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            – D: 15
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              Text: Dec2024
              Type: published
              Y: 2024
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              Value: 377
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            – TitleFull: Materials Letters
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