Construction and current–voltage properties of nanofilm CdS@Cd/Si heterojunctions by the direct current magnetron sputtering and solvothermal methods.
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| Title: | Construction and current–voltage properties of nanofilm CdS@Cd/Si heterojunctions by the direct current magnetron sputtering and solvothermal methods. |
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| Authors: | Ji, Peng Fei1 (AUTHOR), Hao, Ya Juan1 (AUTHOR), Li, Yong1 (AUTHOR) liyong@pdsu.edu.cn, Song, Yue Li1 (AUTHOR), Zhou, Feng Qun1 (AUTHOR) |
| Source: | Bulletin of Materials Science. Dec2024, Vol. 47 Issue 4, p1-5. 5p. |
| Subjects: | DC sputtering, Semiconductors, Stray currents, Electronic structure, High voltages |
| Abstract: | Nanofilm CdS@Cd/Si heterojunctions have been fabricated by a two-step method. The obvious rectification effect can be observed. However, the leakage current density is relatively large. According to the criterion for judging the conduction model, three conduction mechanisms can be observed, which are the thermally generated electrons model, the Ohmic model and the space-charge-limited-current model from low voltage to high voltage, respectively. The preparation process of nanofilm CdS@Cd/Si heterojunctions by this two-step method, which directly grows nanofilm CdS@Cd on the silicon substrate to construct heterojunctions, can reduce the introduction of excessive defects and facilitate the release of stress in the interface. [ABSTRACT FROM AUTHOR] |
| Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 180499517 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Construction and current–voltage properties of nanofilm CdS@Cd/Si heterojunctions by the direct current magnetron sputtering and solvothermal methods. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ji%2C+Peng+Fei%22">Ji, Peng Fei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hao%2C+Ya+Juan%22">Hao, Ya Juan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Yong%22">Li, Yong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> liyong@pdsu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Song%2C+Yue+Li%22">Song, Yue Li</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Feng+Qun%22">Zhou, Feng Qun</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Bulletin+of+Materials+Science%22">Bulletin of Materials Science</searchLink>. Dec2024, Vol. 47 Issue 4, p1-5. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22DC+sputtering%22">DC sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+structure%22">Electronic structure</searchLink><br /><searchLink fieldCode="DE" term="%22High+voltages%22">High voltages</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Nanofilm CdS@Cd/Si heterojunctions have been fabricated by a two-step method. The obvious rectification effect can be observed. However, the leakage current density is relatively large. According to the criterion for judging the conduction model, three conduction mechanisms can be observed, which are the thermally generated electrons model, the Ohmic model and the space-charge-limited-current model from low voltage to high voltage, respectively. The preparation process of nanofilm CdS@Cd/Si heterojunctions by this two-step method, which directly grows nanofilm CdS@Cd on the silicon substrate to construct heterojunctions, can reduce the introduction of excessive defects and facilitate the release of stress in the interface. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=180499517 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s12034-024-03337-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1 Subjects: – SubjectFull: DC sputtering Type: general – SubjectFull: Semiconductors Type: general – SubjectFull: Stray currents Type: general – SubjectFull: Electronic structure Type: general – SubjectFull: High voltages Type: general Titles: – TitleFull: Construction and current–voltage properties of nanofilm CdS@Cd/Si heterojunctions by the direct current magnetron sputtering and solvothermal methods. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ji, Peng Fei – PersonEntity: Name: NameFull: Hao, Ya Juan – PersonEntity: Name: NameFull: Li, Yong – PersonEntity: Name: NameFull: Song, Yue Li – PersonEntity: Name: NameFull: Zhou, Feng Qun IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 02504707 Numbering: – Type: volume Value: 47 – Type: issue Value: 4 Titles: – TitleFull: Bulletin of Materials Science Type: main |
| ResultId | 1 |
