Exploration of physical properties of DC magnetron sputtered titania thin films and performance evaluation of Au/titania-based ultraviolet photodetectors.
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| Title: | Exploration of physical properties of DC magnetron sputtered titania thin films and performance evaluation of Au/titania-based ultraviolet photodetectors. |
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| Authors: | Jagadish, K. A.1 (AUTHOR), Kekuda, Dhananjaya1 (AUTHOR) dhaya.kekuda@manipal.edu |
| Source: | Journal of Materials Science: Materials in Electronics. Nov2024, Vol. 35 Issue 31, p1-15. 15p. |
| Subjects: | DC sputtering, Schottky barrier diodes, Surface roughness, Schottky barrier, Thin films, Magnetron sputtering |
| Abstract: | The present work demonstrates the impact of oxygen flow rates on various properties of TiO2 thin films grown using DC magnetron sputtering. The XRD studies verified the materials' polycrystalline nature. Surface roughness variation with oxygen flow rate was noticed using AFM analysis. The optical energy bandgap was found to vary between 3.42 and 3.75 eV. The electrical and photo-sensing properties of the TiO2 layer were thoroughly examined. The constructed Au/TiO2 junction exhibited a Schottky barrier with a three-order rectification ratio recorded under dark mode. The sensor parameters such as responsivity, detectivity, response time, and linear dynamic range were carefully studied. Under UV (395 nm, 0.5 mW/cm2) irradiation, the diode fabricated at 18% of oxygen flow rate (Au/TiO2-18/ITO) had a photoresponsivity of 0.209 A/W and a steady photo detectivity of 4.03 × 1010 Jones at room temperature. Remarkably, a response time of 520/133 ms was reported. Thus, our findings indicate that Au/TiO2 Schottky diodes might be beneficial for visible, transparent UV photosensors in future optoelectronic applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The present work demonstrates the impact of oxygen flow rates on various properties of TiO2 thin films grown using DC magnetron sputtering. The XRD studies verified the materials' polycrystalline nature. Surface roughness variation with oxygen flow rate was noticed using AFM analysis. The optical energy bandgap was found to vary between 3.42 and 3.75 eV. The electrical and photo-sensing properties of the TiO2 layer were thoroughly examined. The constructed Au/TiO2 junction exhibited a Schottky barrier with a three-order rectification ratio recorded under dark mode. The sensor parameters such as responsivity, detectivity, response time, and linear dynamic range were carefully studied. Under UV (395 nm, 0.5 mW/cm2) irradiation, the diode fabricated at 18% of oxygen flow rate (Au/TiO2-18/ITO) had a photoresponsivity of 0.209 A/W and a steady photo detectivity of 4.03 × 1010 Jones at room temperature. Remarkably, a response time of 520/133 ms was reported. Thus, our findings indicate that Au/TiO2 Schottky diodes might be beneficial for visible, transparent UV photosensors in future optoelectronic applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-024-13752-5 |
