Electrical properties of single-crystal VO2(M) by RF magnetron sputtering.
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| Title: | Electrical properties of single-crystal VO |
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| Authors: | Wang, Jing1 (AUTHOR), Dai, Yunpeng1 (AUTHOR), Yu, Jiaming1 (AUTHOR), Wang, Ying1,2 (AUTHOR) 2006000081@shiep.edu.cn, Chen, Dongsheng1 (AUTHOR) cds78@shiep.edu.cn |
| Source: | Journal of Materials Science: Materials in Electronics. Nov2024, Vol. 35 Issue 31, p1-12. 12p. |
| Subjects: | Phase transitions, Substrates (Materials science), Magnetron sputtering, Surface roughness, Atomic force microscopy |
| Abstract: | A metastable mixed thin film of VO2(A) and VO2(B) was prepared on a quartz glass substrate using radio frequency magnetron sputtering method and V as the target material. After annealing above 520 °C in a tube furnace, the mixed thin film transformed from VO2(A) and VO2(B) to VO2(M). We studied the effects of different annealing temperatures on the surface morphology, structure, electrical properties, and V valence state distribution of VO2(M). Using XRD patterns, the phase composition of VO2 before and after annealing can be distinguished. Through EDX and XPS spectroscopic measurements, the elemental composition (V, O, Si) on the surface of VO2(M) can be identified, and the proportion of different valence state V elements (V3+, V4+, V5+) can be estimated. According to atomic force microscopy, the surface roughness of the annealed sample has been improved compared to before annealing. X-ray diffraction confirms that high-temperature annealing leads to the transformation of VO2(A) and VO2(B) into VO2(M). Scanning electron microscopy is used to observe the nanoscale characteristics of VO2, indicating significant differences in its structure before and after annealing, especially at high annealing temperatures. After annealing at 540 °C, the temperature resistivity measurement results showed that the difference in resistivity of the film before and after phase transition reached nearly 1000 times, demonstrating excellent electrical performance. When the annealing temperature is further increased to 550 °C, the difference in resistivity caused by phase transformation decreases. Compared with samples annealed at different temperatures, the VO2(M) thin film annealed at 540 °C showed the maximum change in electrical resistivity after phase transition. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | A metastable mixed thin film of VO2(A) and VO2(B) was prepared on a quartz glass substrate using radio frequency magnetron sputtering method and V as the target material. After annealing above 520 °C in a tube furnace, the mixed thin film transformed from VO2(A) and VO2(B) to VO2(M). We studied the effects of different annealing temperatures on the surface morphology, structure, electrical properties, and V valence state distribution of VO2(M). Using XRD patterns, the phase composition of VO2 before and after annealing can be distinguished. Through EDX and XPS spectroscopic measurements, the elemental composition (V, O, Si) on the surface of VO2(M) can be identified, and the proportion of different valence state V elements (V3+, V4+, V5+) can be estimated. According to atomic force microscopy, the surface roughness of the annealed sample has been improved compared to before annealing. X-ray diffraction confirms that high-temperature annealing leads to the transformation of VO2(A) and VO2(B) into VO2(M). Scanning electron microscopy is used to observe the nanoscale characteristics of VO2, indicating significant differences in its structure before and after annealing, especially at high annealing temperatures. After annealing at 540 °C, the temperature resistivity measurement results showed that the difference in resistivity of the film before and after phase transition reached nearly 1000 times, demonstrating excellent electrical performance. When the annealing temperature is further increased to 550 °C, the difference in resistivity caused by phase transformation decreases. Compared with samples annealed at different temperatures, the VO2(M) thin film annealed at 540 °C showed the maximum change in electrical resistivity after phase transition. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-024-13754-3 |
