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Electrical properties of single-crystal VO2(M) by RF magnetron sputtering.

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Title: Electrical properties of single-crystal VO2(M) by RF magnetron sputtering.
Authors: Wang, Jing1 (AUTHOR), Dai, Yunpeng1 (AUTHOR), Yu, Jiaming1 (AUTHOR), Wang, Ying1,2 (AUTHOR) 2006000081@shiep.edu.cn, Chen, Dongsheng1 (AUTHOR) cds78@shiep.edu.cn
Source: Journal of Materials Science: Materials in Electronics. Nov2024, Vol. 35 Issue 31, p1-12. 12p.
Subjects: Phase transitions, Substrates (Materials science), Magnetron sputtering, Surface roughness, Atomic force microscopy
Abstract: A metastable mixed thin film of VO2(A) and VO2(B) was prepared on a quartz glass substrate using radio frequency magnetron sputtering method and V as the target material. After annealing above 520 °C in a tube furnace, the mixed thin film transformed from VO2(A) and VO2(B) to VO2(M). We studied the effects of different annealing temperatures on the surface morphology, structure, electrical properties, and V valence state distribution of VO2(M). Using XRD patterns, the phase composition of VO2 before and after annealing can be distinguished. Through EDX and XPS spectroscopic measurements, the elemental composition (V, O, Si) on the surface of VO2(M) can be identified, and the proportion of different valence state V elements (V3+, V4+, V5+) can be estimated. According to atomic force microscopy, the surface roughness of the annealed sample has been improved compared to before annealing. X-ray diffraction confirms that high-temperature annealing leads to the transformation of VO2(A) and VO2(B) into VO2(M). Scanning electron microscopy is used to observe the nanoscale characteristics of VO2, indicating significant differences in its structure before and after annealing, especially at high annealing temperatures. After annealing at 540 °C, the temperature resistivity measurement results showed that the difference in resistivity of the film before and after phase transition reached nearly 1000 times, demonstrating excellent electrical performance. When the annealing temperature is further increased to 550 °C, the difference in resistivity caused by phase transformation decreases. Compared with samples annealed at different temperatures, the VO2(M) thin film annealed at 540 °C showed the maximum change in electrical resistivity after phase transition. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Electrical properties of single-crystal VO<subscript>2</subscript>(M) by RF magnetron sputtering.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Nov2024, Vol. 35 Issue 31, p1-12. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+roughness%22">Surface roughness</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: A metastable mixed thin film of VO2(A) and VO2(B) was prepared on a quartz glass substrate using radio frequency magnetron sputtering method and V as the target material. After annealing above 520 °C in a tube furnace, the mixed thin film transformed from VO2(A) and VO2(B) to VO2(M). We studied the effects of different annealing temperatures on the surface morphology, structure, electrical properties, and V valence state distribution of VO2(M). Using XRD patterns, the phase composition of VO2 before and after annealing can be distinguished. Through EDX and XPS spectroscopic measurements, the elemental composition (V, O, Si) on the surface of VO2(M) can be identified, and the proportion of different valence state V elements (V3+, V4+, V5+) can be estimated. According to atomic force microscopy, the surface roughness of the annealed sample has been improved compared to before annealing. X-ray diffraction confirms that high-temperature annealing leads to the transformation of VO2(A) and VO2(B) into VO2(M). Scanning electron microscopy is used to observe the nanoscale characteristics of VO2, indicating significant differences in its structure before and after annealing, especially at high annealing temperatures. After annealing at 540 °C, the temperature resistivity measurement results showed that the difference in resistivity of the film before and after phase transition reached nearly 1000 times, demonstrating excellent electrical performance. When the annealing temperature is further increased to 550 °C, the difference in resistivity caused by phase transformation decreases. Compared with samples annealed at different temperatures, the VO2(M) thin film annealed at 540 °C showed the maximum change in electrical resistivity after phase transition. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-024-13754-3
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        Text: English
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        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Magnetron sputtering
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      – SubjectFull: Surface roughness
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
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      – TitleFull: Electrical properties of single-crystal VO2(M) by RF magnetron sputtering.
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            NameFull: Wang, Jing
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            NameFull: Dai, Yunpeng
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            NameFull: Yu, Jiaming
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            – D: 01
              M: 11
              Text: Nov2024
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              Y: 2024
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