Photoluminescence Characteristics of Post-annealed Cu2O Thin Films.
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| Title: | Photoluminescence Characteristics of Post-annealed Cu |
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| Authors: | Chia, Chin-Hau1 (AUTHOR) chchia@nuk.edu.tw, Su, Shih-Hao1 (AUTHOR), Hu, Yu-Min1 (AUTHOR), Chiou, Jau-Wern1 (AUTHOR), Yu, Chin-Chung1 (AUTHOR), Jian, Sheng-Rui1,2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Dec2024, Vol. 53 Issue 12, p7261-7270. 10p. |
| Subjects: | Thin films, Cuprous oxide, Partial pressure, Low temperatures, Exciton theory, Magnetron sputtering |
| Abstract: | Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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