Effect of binary ion substitution on the crystal structure and microwave dielectric properties of MgTa2O6 ceramics.
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| Title: | Effect of binary ion substitution on the crystal structure and microwave dielectric properties of MgTa |
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| Authors: | Gao, Yang1,2 (AUTHOR), Chen, Junjie1,3 (AUTHOR), Fang, Weishuang1 (AUTHOR), Peng, Haiyi1 (AUTHOR), Xie, Tianyi1 (AUTHOR), Ren, Haishen1 (AUTHOR), Yao, Xiaogang1,2 (AUTHOR) yaoxiaogang@mail.sic.ac.cn, Lin, Huixing1,2 (AUTHOR) huixinglin@mail.sic.ac.cn |
| Source: | Journal of the American Ceramic Society. Feb2025, Vol. 108 Issue 2, p1-12. 12p. |
| Subjects: | Permittivity, Complex ions, Large deviations (Mathematics), Dielectric properties, Crystal structure, Ceramics, Microwaves |
| Abstract: | Mg1/3A11/3A21/3Ta2O6 ceramics (where A1 and A2 represent Co, Ni, or Zn) were prepared using the solid‐phase reaction route. The results of X‐ray diffraction and Raman tests showed that (Co1/2Ni1/2)2+, (Co1/ 2Zn1/2)2+, and (Ni1/2Zn1/2)2+ ions replaced Mg2+ ions in the lattice of MgTa2O6, resulting in the formation of a pure tri‐rutile structure. All three complex ions could significantly reduce the sintering temperature of the ceramics (by 150°C–200°C) and could broaden the sintering window. The large deviation (48.8%–69.2%) between the porosity corrected relative permittivity εr‐corr. and the theoretical relative permittivity εr‐theo. might be due to the overestimation of the ionic polarizability of Ta5+ by Shannon. (Co1/2Ni1/2)2+ has the most significant effect of increasing the bond energy of ceramic A–O bonds, reducing the τf value from 51 to 36 ppm/°C. In addition, the mechanisms affecting their dielectric properties are discussed based on bond ionicity (fi), full width at half maximum (FWHM) of Raman peak, and bond energy (E). Mg1/3Co1/3Ni1/3Ta2O6 ceramic sintered at 1350°C have the most excellent microwave dielectric properties: εr = 26.8, Q × f = 86,000 GHz, and τf = 36 ppm/°C. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Mg1/3A11/3A21/3Ta2O6 ceramics (where A1 and A2 represent Co, Ni, or Zn) were prepared using the solid‐phase reaction route. The results of X‐ray diffraction and Raman tests showed that (Co1/2Ni1/2)2+, (Co1/ 2Zn1/2)2+, and (Ni1/2Zn1/2)2+ ions replaced Mg2+ ions in the lattice of MgTa2O6, resulting in the formation of a pure tri‐rutile structure. All three complex ions could significantly reduce the sintering temperature of the ceramics (by 150°C–200°C) and could broaden the sintering window. The large deviation (48.8%–69.2%) between the porosity corrected relative permittivity εr‐corr. and the theoretical relative permittivity εr‐theo. might be due to the overestimation of the ionic polarizability of Ta5+ by Shannon. (Co1/2Ni1/2)2+ has the most significant effect of increasing the bond energy of ceramic A–O bonds, reducing the τf value from 51 to 36 ppm/°C. In addition, the mechanisms affecting their dielectric properties are discussed based on bond ionicity (fi), full width at half maximum (FWHM) of Raman peak, and bond energy (E). Mg1/3Co1/3Ni1/3Ta2O6 ceramic sintered at 1350°C have the most excellent microwave dielectric properties: εr = 26.8, Q × f = 86,000 GHz, and τf = 36 ppm/°C. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 00027820 |
| DOI: | 10.1111/jace.20232 |
